The resolution of resists is influenced by several parameter such as e.g. the type of mask liner used, most of the respective NA (numerical aperture), film thickness, exposure wavelength, concentration of developer and time of development, substrate (e.g. reflexion properties), and a few other parameters with minor influence on the result.
Typical values for 1.4 µm thick positive resists are resolutions between 0.4 and 0.5 and a contrast of 4.5 to 5.
Respective parameters for each type of photoresist are specified in our Parameter Collection (see “Photoresists”).