The new special resist SX AR-N 4810/1 is a chemically enhanced photo resist based on PMMA, which can be developed waterfree – crucial in the case of moisture-sensitive substrates – with organic solvents. SX AR-N 4810/1 is offered as a solution in anisole and contains, besides PMMA, crosslinkers and aminic components. X AR 300-74/1 or MIBK are suitable developers.
With the resist system, thicker layers up to 3,5 µm can be realized as well. Our developer X AR 300-74/3 is particularly well suited for maximum coating thickness, the sensitivity is in the range of approximately 600 – 650 mJ/cm2 (broadband UV). The resulting structures are stable up to 230 °C and transparent in the optical wavelength range >300 nm.
Overview Photoresists- Negative