{"id":7008,"date":"2018-10-12T14:06:07","date_gmt":"2018-10-12T12:06:07","guid":{"rendered":"https:\/\/www.allresist.de\/?p=7008"},"modified":"2022-02-17T13:40:15","modified_gmt":"2022-02-17T12:40:15","slug":"resist-wiki-atlas-46-for-e-beam-lithography","status":"publish","type":"post","link":"https:\/\/www.allresist.com\/resist-wiki-atlas-46-for-e-beam-lithography\/","title":{"rendered":"Atlas 46 for e-beam lithography"},"content":{"rendered":"

Atlas 46 for e-beam lithography<\/h1>\n<\/div><\/section>\n

A new application field for Atlas 46 is electron beam lithography, as experiments with a thin Atlas resist layer patterned by e-beam lithography demonstrated. At a layer thickness of 450 nm, 200 nm lines were written into this layer. The sensitivity was 70 \u03bcC\/cm\u00b2 at an acceleration voltage of 100 kV. The solvent-based development was carried\u00a0<\/span>out with AR 300-12, followed by a short post treatment with acetone.<\/p>\n

\"\"<\/p>\n

200 nm lines generated with Atlas resist<\/em><\/p>\n

Atlas 46 is thus also suitable for a use as electron beam resist.<\/p>\n<\/div><\/section>\n<\/div><\/div><\/div><\/div><\/div>\n