SX AR-N 4340/7
Negative photoresist for one- and two-layer systems
Please contact us for further requests.
Characterisation
- i-line, g-line, deep UV (248-266 nm)
- highest sensitivity, high resolution
- good adhesion properties, high contrast, chemically enhanced
- undercut profiles (lift-off) are possible
- may be used with AR-BR 5400 as 2-layer system
- plasma etching stabel, thermostable up to 300 °C
- polyhydroxystyrene polymer, with photochemical acid generator and aminic crosslinker
- Safer solvent PGMEA
Interesting Resist Wiki articles
Properties
- Film thickness/4000 rpm (μm)1.4 µm
- Resolution (μm)0.7 µm
- Contrast5.0
- Flash point (°C)44 °C
- Storage 6 month (°C)10 - 18 °C
Available order sizes
- On request
Suitable process chemicals
Structure resolution
SX AR-N 4340/7: 0.7 µm resolution with a coating thickness of 1.4 µm.
Resist structures
SX AR-N 4340/7: Resist structures after 300 °C tempering.
Spin curve
Spin curve of SX AR-N 4340/7.
Process parameters
- SubstrateSi 4" Wafer
- Tempering85 °C, 60 s, hot plate
- Exposurei-line Stepper (NA: 0,65)
- DevelopmentAR 300-475, 60 s, 22 °C