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SX AR-N 4340/7

Negative photoresist for one- and two-layer systems

Characterisation

  • i-line, g-line, deep UV (248-266 nm)
  • highest sensitivity, high resolution
  • good adhesion properties, high contrast, chemically enhanced
  • undercut profiles (lift-off) are possible
  • may be used with AR-BR 5400 as 2-layer system
  • plasma etching stabel, thermostable up to 300 °C
  • polyhydroxystyrene polymer, with photochemical acid generator and aminic crosslinker
  • Safer solvent PGMEA

Interesting Resist Wiki articles

Properties

  • Film thickness/4000 rpm (μm)
    1.4 µm
  • Resolution (μm)
    0.7 µm
  • Contrast
    5.0
  • Flash point (°C)
    44 °C
  • Storage 6 month (°C)
    10 - 18 °C

Available order sizes

  • On request

Please contact us for further requests.

Suitable process chemicals

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution

SX AR-N 4340/7: 0.7 µm resolution with a coating thickness of 1.4 µm.

 

Resist structures

SX AR-N 4340/7: Resist structures after 300 °C tempering.

 

Spin curve

Spin curve of SX AR-N 4340/7.

Process parameters

  • Substrate
    Si 4" Wafer
  • Tempering
    85 °C, 60 s, hot plate
  • Exposure
    i-line Stepper (NA: 0,65)
  • Development
    AR 300-475, 60 s, 22 °C

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