For the removal of all e-beam resist coatings baked at lower temperatures (softbake), polar solvents may be used such as e.g. the recommended thinner AR 300-12 or AR 600-01, 600-07 and 600-09, as well as remover AR 600-70 (acetone-based). AR 600-70 is the most commonly used remover for this purpose.
For a wet-chemical stripping of e-beam resist films highly tempered up to 200 °C, Allresist recommends the organic all-round remover AR 300-76 which can be heated to 80 °C in order to reduce the dissolution time. Also available for this purpose are the organic removers AR 300-70 and AR 300-72, but both contain NEP as main component which was classified as toxic for reproduction.
The aqueous-alkaline remover AR 300-73 can be heated to 50 °C and is particularly suitable for novolac-based e-beam resist films which were tempered up to 200 °C. This developer however attacks aluminium surfaces.
For e-beam resist films (except novolac-based layers) that were tempered up to 200 °C, we generally recommend remover AR 600-71 which works already at room temperature highly efficiently. This product is especially intended for customers who are able to use removers with low flash point.
~ details see product information remover
In semiconductor industries, the removal (stripping) is mostly performed by ashing in a plasma asher. The O2-plasma generated by microwave excitation is used for an isotropic etching of the photoresist. But also oxidizing acid mixtures (piranha, nitrohydrochloric acid, nitric acid and others) may be applied in wet chemical removal procedures.