You are here: / / / / / / Bottom Resist AR-BR 5460

Bottom Resist AR-BR 5460

Positive or negative system for optically transparent and thermally resistant structures

Characterisation

  • bottom resist not light sensitivity
  • broadband UV, i-line, g-line for top resist
  • for lift-off structures
  • for optically transparent structures from 270 nm to IR with thermally stable structures up to 250 °C
  • aqueous-alkaline development
  • temperature-stable up to 140 °C (with AR-P 3500)
  • 5400 copolymer methyl methacrylate/methacrylic acid
  • 3- safer solvent PM (5400), PGMEA (3500, 4340)

Interesting Resist Wiki articles

Properties

  • Film thickness/4000 rpm (μm)
    1,0 µm
  • Resolution top resist 2 L (μm)
    3,0
  • Flash point (°C)
    30 °C
  • Storage 6 month (°C)
    10 - 22 °C

Available order sizes

  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Suitable process chemicals

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

Remover AR 300-73

For the stripping of tempered photoresist and e-beam resist films

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 600-07

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution of positive system

AR-BR 5460 – AR-P 3510 5 μm-bars of positive two-layer system after development

Process parameters

  • Substrate
    Si 4" Wafer
  • Tempering
    90 °C, 1 min, hot plate
  • Exposure
    g-line stepper (NA: 0,56)
  • Development
    AR 300-35, 1 : 1, 60 s, 22 °C

Spin curve

Spin curves of the AR-BR 5400 series.

    Product Request

    *Name

    *Company/Institute

    *E-Mail

    *Subject

    *Your Message