Bottom Resist AR-BR 5460
Positive or negative system for optically transparent and thermally resistant structures
Characterisation
- bottom resist not light sensitivity
- broadband UV, i-line, g-line for top resist
- for lift-off structures
- for optically transparent structures from 270 nm to IR with thermally stable structures up to 250 °C
- aqueous-alkaline development
- temperature-stable up to 140 °C (with AR-P 3500)
- 5400 copolymer methyl methacrylate/methacrylic acid
- 3- safer solvent PM (5400), PGMEA (3500, 4340)
Interesting Resist Wiki articles
Properties
- Film thickness/4000 rpm (μm)1,0 µm
- Resolution top resist 2 L (μm)3,0
- Flash point (°C)30 °C
- Storage 6 month (°C)10 - 22 °C
Available order sizes
- 1 x 100 ml (experimental sample)
- 1 x 250 ml
- 1 x 1 L
- 6 x 1 L
Suitable process chemicals
Structure resolution of positive system
AR-BR 5460 – AR-P 3510 5 μm-bars of positive two-layer system after development
Process parameters
- SubstrateSi 4" Wafer
- Tempering90 °C, 1 min, hot plate
- Exposureg-line stepper (NA: 0,56)
- DevelopmentAR 300-35, 1 : 1, 60 s, 22 °C
Spin curve
