E-Beam Resist AR-N 7700 series
(AR-N 7700.08, AR-N 7700.18)
High-resolution e-beam resists for the production of integrated circuits
Please contact us for further requests.
Characterisation
- e-beam, deep UV; chemically enhanced (CAR)
- 7700: high contrast for digital reproduction with excellent sensitivity
- negative-tone with high resolution in the UV range 248-265 nm and 290-330 nm
- plasma etching resistant, temp. stable up to 140 °C
- novolac, acid generator, crosslinking agent
- Safer Solvent PGMEA
Interesting Resist Wiki articles
Properties
AR-P 7700.08
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Film thickness/4000 rpm: 0,10 µm
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Resolution best value: 80 nm
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Contrast: 5
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Flash point: 42 °C
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Storage 6 month: 8-12 °C
AR-P 7700.18
Available order sizes
- Product on request
Suitable process chemicals
Structure resolution
AR-N 7700.18 112 x 164 squares, film thickness of 400 nm
Process parameters
- Substrate4“ Si-Wafer
- Tempering
85 °C, 90 s, hot plate
- Exposure
ZBA 21, 30 kV
- Development
AR 300-46, 60 s, 22 °C
Spin curve
Resist structures
AR-N 7700 500-nm dots, written with a dose of 12 μC/cm² (30 kV).