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E-Beam Resist AR-P 6510 series

Product on demand

(AR-P 6510.15, AR-P 6510.17)

Thick positive resists for the production of microcomponents

Characterisation

  • e-beam, synchrotron, X-ray (no yellow light required)
  • excellent image quality
  • solvent-based developer
  • film thickness values of 10 μm to 250 μm
  • process-stable
  • high molecular weight poly(methyl methacrylate)
  • Safer Solvent PGMEA

Interesting Resist Wiki articles

Properties

  • Film thickness/200 rpm:       45 µm
  • Resolution best value:      1 nm (X-Ray)
  • Contrast:                               10 (X-Ray)
  • Flash point:                        42 °C
  • Storage 6 month:     10-22 °C

Available order sizes

Product on request

Please contact us for further requests.

Suitable process chemicals

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 600-56

For the development of e-beam resists films

Developer X AR 600-50/2

High-purity and ultra-fine filtered developer for selective T-gate applications

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Stopper X AR 600-60/1

For stopping the protective coating SX AR-PC 5000/41 after development with X AR 300-74/1, main component: Octane

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution

AR-P 6510.17 Film thickness 40 μm, structures up to 5 μm (synchrotron)

Process parameters

  • Substrate
    4“ Si-Wafer
  • Tempering

    100 °C, 4 h Konvektionsofen

  • Exposure

    Synchrotron

  • Development

    AR 600-51, 20 min

  • Stopper

    AR 600-61, 3 min

Resist structures

AR-P 6510.17 (diluted), exposure with e-beam (developer AR 600-55), film thickness 5 μm

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