E-Beam Resist AR-P 6510 series

Product on demand

(AR-P 6510.15, AR-P 6510.17)

Thick positive resists for the production of microcomponents

Product information

Your request for this product

Characterisation

e-beam, synchrotron, X-ray (no yellow light required)
excellent image quality
solvent-based developer
film thickness values of 10 μm to 250 μm
process-stable
high molecular weight poly(methyl methacrylate)
Safer Solvent PGMEA

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Properties

AR-P 6510.15

Film thickness/200 rpm: 45 µm
Resolution best value: 1 nm (X-Ray)
Contrast: 10 (X-Ray)
Flash point: 42 °C
Storage 6 month: 10-22 °C

AR-P 6510.17

Available order sizes

Product on request

Please contact us for further requests.

Suitable process chemicals

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 600-56

For the development of e-beam resists films

Developer X AR 600-50/2

High-purity and ultra-fine filtered developer for selective T-gate applications

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Stopper X AR 600-60/1

For stopping the protective coating SX AR-PC 5000/41 after development with X AR 300-74/1, main component: Octane

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution

AR-P 6510.17 Film thickness 40 μm, structures up to 5 μm (synchrotron)

Process parameters

Substrate
4“ Si-Wafer
Tempering

100 °C, 4 h Konvektionsofen
Exposure

Synchrotron
Development

AR 600-51, 20 min
Stopper

AR 600-61, 3 min

Resist structures

AR-P 6510.17 (diluted), exposure with e-beam (developer AR 600-55), film thickness 5 μm

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