You are here: / / / / / / / Photoresist AR-P 3740

AR-P 3740

Sensitive positive-tone standard resists for the production of highly integrated circuits

Characterisation

  • broadband UV, i-line, g-line
  • high sensitivity, highest resolution up to 0.4 μm
  • high contrast, excellent dimensional accuracy
  • optimised coating properties on topologically complex substrate surfaces
  • plasma etching resistant, stable up to 120 °C
  • combination of novolac and naphthoquinone diazide
  • Safer solvent PGMEA

Interesting Resist Wiki articles

Properties

  • Film thickness / 4000 rpm (μm)
    1,4 µm
  • Resolution (μm)
    0,4 µm
  • Contrast
    6,0
  • Flash point (°C)
    42 °C
  • Storage 6 month (°C)
    10-18 °C

Available order sizes

  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Suitable process chemicals

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution

Film thickness 1.1 μm Resist structures 0.5 μm L/S

Process parameters

  • Substrate
    Si 4“ Wafer
  • Tempering
    100 °C, 90 s, hot plate
  • Exposure
    i-line stepper (NA: 0,65)
  • Development
    AR 300-47, 60 s, 22 °C

Spin curve

    Product Request

    *Name

    *Company/Institute

    *E-Mail

    *Subject

    *Your Message