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Photoresist SX AR-P 3500/8

Product on demand

(Experimental sample/custom-made product)

Positive photoresist for high-temperature application up to 300 °C

Characterisation

  • broadband, i-line, g-line
  • high plasma resistant, thermally stable up to 300 °C
  • suitable for: high-temperature 2-layer lift-off processes as well as plasma etching and implantation processes
  • combination of poly(hydroxystyrene-co-MMA)-naphthoquinone diazide
  • safer solvent PGMEA

Interesting Resist Wiki articles

Properties

  • Viscosity 25°C
    20 mPas
  • Film thickness/4.000 rpm
    1,4 µm
  • Resolution
    0,8 µm
  • Contrast
    3,0
  • Flash point
    42 °C
  • Storage 6 month
    10 - 18 °C

Available order sizes

  • Product on request

Please contact us for further requests.

Suitable process chemicals

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Resist structures

7 μm trenches with SX AR-P 3500/8

10 μm webs of SX AR-P 3500/8 after a hard bake of 280 °C

Spin curve

Process parameters

  • Substrate
    Si 4" wafer
  • Tempering
    95 °C, 2 min, hot plate
  • Exposure
    i-line stepper (NA: 0,56)
  • Development
    AR 300-47, 1 : 1, 1 min, 22 °C

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