Photoresist SX AR-P 3500/8
Product on demand
(Experimental sample/custom-made product)
Positive photoresist for high-temperature application up to 300 °C
Characterisation
- broadband, i-line, g-line
- high plasma resistant, thermally stable up to 300 °C
- suitable for: high-temperature 2-layer lift-off processes as well as plasma etching and implantation processes
- combination of poly(hydroxystyrene-co-MMA)-naphthoquinone diazide
- safer solvent PGMEA
Properties
- Viscosity 25°C20 mPas
- Film thickness/4.000 rpm1,4 µm
- Resolution0,8 µm
- Contrast3,0
- Flash point42 °C
- Storage 6 month10 - 18 °C
Available order sizes
- Product on request
Please contact us for further requests.
Suitable process chemicals
Resist structures
7 μm trenches with SX AR-P 3500/8
10 μm webs of SX AR-P 3500/8 after a hard bake of 280 °C
Spin curve
Process parameters
- SubstrateSi 4" wafer
- Tempering95 °C, 2 min, hot plate
- Exposurei-line stepper (NA: 0,56)
- DevelopmentAR 300-47, 1 : 1, 1 min, 22 °C