CSAR 62 Avoidance of particles during large-area exposures
During the exposure and subsequent development of large structures (> 1 µm), occasionally particles are deposited on fully developed surfaces
CSAR 62 lift-off for thick layers
For special applications in which metal layers with a thickness of a few hundred nanometres are to be generated by lift-off techniques, accordingly higher layers are needed.
CSAR 62 thick layers
Intense plasma etchings for the generation of deep etch structures however require significantly thicker resist layers and place special demands on resolution and contrast.
Thick CSAR 62
A few applications like e.g. the manufacture of deep etched structures by plasma etching require a processing of thick resist layers. Of major importance in this case is a high sensitivity, especially in electron beam lithography.
Solvents in e-beam resists
The beginning of electron beam lithography dates back to the early 1980s when the first PMMA resists were developed, with chlorobenzene as first solvent. This solvent most efficiently dissolves the various PMMAs (with different molecular masses of 50K to 950K)
Collapse of extreme high-resolution e-beam resist structures
A typical problem arising from an extreme resolution at an aspect ratio of > 10 is the collapse of bar structures. In Fig. 1, 10-nm bars with a pitch of 50 nm are displayed. These structures were realised with CSAR 62 (SX AR-
Two-layer PMMA e-beam resist system for high-resolution lift-off
For the lift-off of high-resolution structures in a two-layer process, PMMA resists (90K and 200K) were adjusted to yield a film thickness of 90 nm to 100 nm. This resist system is particularly well suited for the fabrication of sub-
High-resolution PMMA one layer resist
Utilizing SX AR-P 640/2 (PMMA 90K) as one layer system, an even higher resolution can be achieved if process parameter are varied, in particular the exposure dose.
Positive polyimide resist for e-beam-lithography
First experiments with our SX AR-P 5000/82.7 using e-beam lithography clearly demonstrated that this resist can easily be patterned which offers the possibility to generate nanostructures which are thermally stable up to 350 °C.