E-Beam Resist AR-P 661 series
(AR-P 661.09)
PMMA resist series 50K – 950K for the production of integrated circuits and masks
Characterisation
- e-beam, deep UV (248 nm)
- very good adhesion to glass, silicon and metals
- for planarization and multi-layer processes
- highest resolution, high contrast
- poly(methyl methacrylate) with diff. molecular weights
Interesting Resist Wiki articles
Properties
AR-P 661.09
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Film thickness/ 4000 rpm: 1,25 µm
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Resolution best value: 6 nm
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Contrast: 7
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Flash point: 28 °C
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Storage 6 month: 10 – 22 °C
Available order sizes
- 1 x 100 ml (experimental sample)
- 1 x 250 ml
- 1 x 1 L
- 6 x 1 L
Please contact us for further requests.
Suitable process chemicals
Dose sequence of the 600K/950K system
Not yet completely developed at 1800 pC/cm
Definition: The sensitivity is expressed in pC/cm for lines, while the unit for areas is μC/cm².
Formation of undercut vs. exposure dose
Trench width top: 20 nm, measured values in the diagram: width of trenches at the bottom