AR-P 5320

Sensitive positive-tone resists for the production of evaporation samples

Product information

Your request for this product

Characterisation

broadband UV, i-line, g-line
high photosensitivity, high resolution
good adhesion properties
for undercut structures for the production of evaporation samples, in particular of metal using lift-off techniques e.g. for conductor paths
plasma etching resistant, temperature stable up to 120 °C
combination of novolac and naphthoquinone diazide
safer solvent PGMEA

Interesting Resist Wiki articles

Properties

Film thickness/ 4000 rpm (μm)
5,0 µm
Resolution (μm)
2,0 µm
Contrast
4,0
Flash point (°C)
42 °C
Storage 6 month (°C)
10-18 °C

Available order sizes

Product on request

Please contact us for further requests.

Suitable process chemicals

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-35

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Resist structures

Lift-off resist structure after development

Process parameters

Substrate
Si 4“ Wafer
Tempering
105 °C, 4 min, hot plate
Exposure
g-line stepper (NA: 0,56)
Development
AR 300-35, 1 : 2, 60 s, 22 °C

Spin curve