for undercut structures for the production of evaporation samples, in particular of metal using lift-off techniques e.g. for conductor paths
plasma etching resistant, temperature stable up to 120 °C
combination of novolac and naphthoquinone diazide
safer solvent PGMEA
Interesting Resist Wiki articles
Film thickness/ 4000 rpm (μm)
Flash point (°C)
Storage 6 month (°C)
Available order sizes
Product on request
Please contact us for further requests.
Suitable process chemicals
Lift-off resist structure after development
Si 4“ Wafer
105 °C, 4 min, hot plate
g-line stepper (NA: 0,56)
AR 300-35, 1 : 2, 60 s, 22 °C
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