AR-N 4600 Photo resist series (Atlas 46)
Extreme stable resist structures, thick thickness, adequate SU-8
Characterization
•i-line, broadband UV
• very good adhesion properties
• very high sensitivity
• 4600-10 for stable layers of 5 μm – 15 μm
• 4650-10 for removable layers of 5 μm – 15 μm
• further film thicknesses up to about 200 μm
available on request
• poly[(o-cresyl glycidyl ether)-co-formaldehyde]
and acid generator
• safer solvent PGMEA
Interesting Resist Wiki articles
Properties
AR-N 4600-10 (S)
- Viscosity 25C: 172 mPas
- Film thickness/4.000 rpm: 10 µm
- Resolution best value: 2 µm
- Contrast: 4
- Flashpoint: 46 °C
- Storage 6 month: 11-22 °C
AR-N 4650-10 (R)
Available order sizes
- 1 x 100 ml (experimental sample)
- 1 x 250 ml
- 1 x 1 L
- 6 x 1 L
Process parameters
Suitable process chemicals
AR-N 4600-10 (S)
- AR 600-70: fast
- AR 300-12: middle
- AR 600-07: slow
AR-N 4650-10 (R)
Resist structures
Atlas S (© Martin-Luther-Universität Halle-Wittenberg)
Atlas R (© Martin-Luther-Universität Halle-Wittenberg)
Spin curve
Process parameters
- SubstratSi 4" Wafer
- Temperung95 °C, 5 min, Hotplate
- BelichtungBreitband-UV, Soft-contact
- EntwicklungAR 300-12 pur, 120 s, 20 °C
Additional information
Processing
Layer thickness values of Atlas R and Atlas S are preadjusted to 10 μm at a spin speed of 1000 rpm. It is recommended to perform the subsequent tempering step on the hotplate at 95 °C for 5 min. Temperature ramps or stepwise drying, e.g. 65 °C for 2 minutes, followed by 95 °C for 4 minutes, can improve the resolution. Both resists can be structured by i-line or broadband UV exposure. Prior to irradiation, substrates should be cooled to room temperature. It is recommended to perform the following tempering step for cross-linking on the hotplate at 105 °C for 2 min. Ramps or stepwise cross-linking procedures like e.g. 65
°C for 2 minutes, followed by 95 °C for 7 minutes and 105 °C for 2 minutes, can improve the resolution. In
general, the stability of resists increases with higher temperatures and longer bake times, but this requires on the
other side longer development times. The use of temperature ramps is also recommended for cooling since
cooling too fast may result in stress cracking.
Development
AR 300-12 is recommended as standard developer, but also AR 600-07 (fast development) or AR 600-70 (gentle development) is suitable. If AR-N 4600-10 (S) is used for development, no dark erosion is observed even after comparably long development times. If the development with AR 300-12 is performed for too long, increased dark erosion of AR-N 4650-10 may result, and a too
long development with AR 600-70 can even cause complete removal. Stopper AR 600-60 is recommended for a particularly
residue-free rinsing after development, followed by rinsing with DI water. It is also possible to rinse resist layers
immediately after development directly with DI water and to dry them on the hotplate. The sensitivity for a layer thickness of 10 μm is about 110 – 160 mJ/cm2 in the broadband UV range (process description on page 3).
Removal
Coated structures of AR-N 4650-10 (R) can be removed with thinner AR 300-12 or AR 600-70. Depending on the degree of cross-linking (dose, temperature and bake time), required removal times may be considerably longer than 30 minutes.
UV-VIS-NIR
UV/VIS spectra of 10 μm layers Atlas S and Atlas R in comparison
to SU-8
UV/VIS spectra of Atlas 46. Yellowing caused by varying the duration
of broadband UV exposure after curing.
Imprinting
Combined nano- and microstructures, produced by imprinting of
AR-N 4600 (© Uni Wuppertal)
Close-up view of AR-N 4600 (© Uni Wuppertal)
Differential Scanning Calorimetry (DSC)
Dynamic differential scanning calorimetry (DSC) of polymers used (left Atlas S, right Atlas R)
Dynamic differential scanning calorimetry (DSC) of polymers used (left Atlas S, right Atlas R)
Bridges
Bridge structure of two-layer system with AR-N 4600-10 (bottom)
and SX AR-N 4620-10/1 (top)
Process description of “bridge construction” with AR-N 4600-10
(bottom, BB-UV) and SX AR-N 4620-10/1 (top, g-line)