AR 600-70 Archive - Allresist EN https://www.allresist.com/portfolio_entries/ar-600-70/ ALLRESIST GmbH - Strausberg, Germany Wed, 25 Oct 2023 09:16:18 +0000 en-GB hourly 1 https://wordpress.org/?v=6.5.2 Photoresist SX AR-P 3500/8 https://www.allresist.com/portfolio-item/photoresist-sx-ar-p-3500-8/ Mon, 17 Feb 2020 13:49:51 +0000 https://www.allresist.de?post_type=portfolio&p=10199 Positive photoresist for high-temperature application up to 300 °C

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Photoresist SX AR-P 3500/8

Product on demand

(Experimental sample/custom-made product)

Positive photoresist for high-temperature application up to 300 °C


Characterisation

  • broadband, i-line, g-line
  • high plasma resistant, thermally stable up to 300 °C
  • suitable for: high-temperature 2-layer lift-off processes as well as plasma etching and implantation processes
  • combination of poly(hydroxystyrene-co-MMA)-naphthoquinone diazide
  • safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Viscosity 25°C
    20 mPas
  • Film thickness/4.000 rpm
    1,4 µm
  • Resolution
    0,8 µm
  • Contrast
    3,0
  • Flash point
    42 °C
  • Storage 6 month
    10 - 18 °C


Available order sizes


  • Product on request

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Resist structures




7 μm trenches with SX AR-P 3500/8





10 μm webs of SX AR-P 3500/8 after a hard bake of 280 °C

Spin curve




Process parameters


  • Substrate
    Si 4" wafer
  • Tempering
    95 °C, 2 min, hot plate
  • Exposure
    i-line stepper (NA: 0,56)
  • Development
    AR 300-47, 1 : 1, 1 min, 22 °C


Request for SX AR-P 3500/8

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]]> Photoresist AR-N 4600 series (Atlas 46) https://www.allresist.com/portfolio-item/photoresist-ar-n-4600-serie/ Mon, 17 Feb 2020 11:26:34 +0000 https://www.allresist.de?post_type=portfolio&p=10150 Thick negative resists for electroplating, microsystems technologies and LIGA < 20 μm

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AR-N 4600 Photo resist series (Atlas 46)

Extreme stable resist structures, thick thickness, adequate SU-8


Characterization

•i-line, broadband UV
• very good adhesion properties
• very high sensitivity
• 4600-10 for stable layers of 5 μm – 15 μm
• 4650-10 for removable layers of 5 μm – 15 μm
• further film thicknesses up to about 200 μm
available on request
• poly[(o-cresyl glycidyl ether)-co-formaldehyde]
and acid generator
• safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Viscosity 25C:                    172 mPas
  • Film thickness/4.000 rpm:     10 µm
  • Resolution best value:                2 µm
  • Contrast:                                4
  • Flashpoint:                        46 °C
  • Storage 6 month:       11-22 °C


Available order sizes


  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Process parameters


Stopper AR 600-60

For the stopping of e-beam resist film development with solvents

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists


Suitable process chemicals


  • AR 600-70:     fast
  • AR 300-12:     middle
  • AR 600-07:     slow

Resist structures




Atlas S (© Martin-Luther-Universität Halle-Wittenberg)





Atlas R (© Martin-Luther-Universität Halle-Wittenberg)

Spin curve




Process parameters


  • Substrat
    Si 4" Wafer
  • Temperung
    95 °C, 5 min, Hotplate
  • Belichtung
    Breitband-UV, Soft-contact
  • Entwicklung
    AR 300-12 pur, 120 s, 20 °C

Additional information

Processing

Layer thickness values of Atlas R and Atlas S are preadjusted to 10 μm at a spin speed of 1000 rpm. It is recommended to perform the subsequent tempering step on the hotplate at 95 °C for 5 min. Temperature ramps or stepwise drying, e.g. 65 °C for 2 minutes, followed by 95 °C for 4 minutes, can improve the resolution. Both resists can be structured by i-line or broadband UV exposure. Prior to irradiation, substrates should be cooled to room temperature. It is recommended to perform the following tempering step for cross-linking on the hotplate at 105 °C for 2 min. Ramps or stepwise cross-linking procedures like e.g. 65
°C for 2 minutes, followed by 95 °C for 7 minutes and 105 °C for 2 minutes, can improve the resolution. In
general, the stability of resists increases with higher temperatures and longer bake times, but this requires on the
other side longer development times. The use of temperature ramps is also recommended for cooling since
cooling too fast may result in stress cracking.

Development

AR 300-12 is recommended as standard developer, but also AR 600-07 (fast development) or AR 600-70 (gentle development) is suitable. If AR-N 4600-10 (S) is used for development, no dark erosion is observed even after comparably long development times. If the development with AR 300-12 is performed for too long, increased dark erosion of AR-N 4650-10 may result, and a too
long development with AR 600-70 can even cause complete removal. Stopper AR 600-60 is recommended for a particularly
residue-free rinsing after development, followed by rinsing with DI water. It is also possible to rinse resist layers
immediately after development directly with DI water and to dry them on the hotplate. The sensitivity for a layer thickness of 10 μm is about 110 – 160 mJ/cm2 in the broadband UV range (process description on page 3).

Removal

Coated structures of AR-N 4650-10 (R) can be removed with thinner AR 300-12 or AR 600-70. Depending on the degree of cross-linking (dose, temperature and bake time), required removal times may be considerably longer than 30 minutes.

UV-VIS-NIR



UV/VIS spectra of 10 μm layers Atlas S and Atlas R in comparison
to SU-8



UV/VIS spectra of Atlas 46. Yellowing caused by varying the duration
of broadband UV exposure after curing.

Imprinting



Combined nano- and microstructures, produced by imprinting of
AR-N 4600 (© Uni Wuppertal)



Close-up view of AR-N 4600 (© Uni Wuppertal)

Differential Scanning Calorimetry (DSC)



Dynamic differential scanning calorimetry (DSC) of polymers used (left Atlas S, right Atlas R)



Dynamic differential scanning calorimetry (DSC) of polymers used (left Atlas S, right Atlas R)

Bridges



Bridge structure of two-layer system with AR-N 4600-10 (bottom)
and SX AR-N 4620-10/1 (top)



Process description of “bridge construction” with AR-N 4600-10
(bottom, BB-UV) and SX AR-N 4620-10/1 (top, g-line)


Anfrage zur AR-N 4600-Serie

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]]> Photoresist AR-N 4400 series https://www.allresist.com/portfolio-item/photoresist-ar-n-4400-05-car44/ Thu, 27 Jul 2017 12:25:37 +0000 https://www.allresist.de?post_type=portfolio&p=7284 Thick and very thick negative resists for electroplating, microsystem technology and LIGA

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AR-N 4400 series (CAR 44)

(AR-N 4400-05, AR-N 4400-10, AR-N 4400-25, AR-N 4400-50)

Thick and very thick negative resists for electroplating, microsystem technology and LIGA 50 μm


Characterisation

  • i-, g-line, e-beam, broadband UV
  • chemically enhanced, very good adhesion, electro plating-stable
  • very high sensitivity, easy removal
  • profiles with high edge steepness for excellent resolution
  • covering of topologies
  • 4400-05 for layer thicknesses up to 10 μm (250 rpm)
  • 4400-10 for layer thicknesses up to 20 um (250 rpm)
  • 4450-10T for film thicknesses up to 20 μm and lift-off
  • 4400-25 for high film thicknesses up to 50 μm (250 rpm)
  • 4400-50 for highest film thicknesses up to 100 μm
  • novolac, crosslinking agent, amine-based acid generator
  • safer solvent PGMEA

Interesting Resist Wiki articles



Properties



  • Layer thickness/1,000 rpm:   5 µm
  • Resolution:                               1.0 µm
  • Contrast:                                   4.0
  • Flash point:                              46 °C
  • Storage up to 6 months:        10-18 °C

* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond this without guarantee until the label date.



Available order sizes


  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-44

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-46

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-475

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution




AR-N 4400-10: 3 μm resolution at a film thickness of 15 μm





AR-N 4400-25: 5 µm trenches with a layer thickness of 40 µm


Spin curve




Spin curve for AR-N 4400-05 and AR-N 4400-10 (AR-N 4450-10/AR-N 4450-10T)





Spin curve of the AR-N 4400-25 and AR-N 4400-50


Resist structures




Turbine wheel from the AR-N 4400-10





Siemens star with the AR-N 4400-25 (30 µm thick)


Thermal stability and shrinking up to 300 °C




Developed lines with a width of 10 – 20 μm were hardened by flood exposure and subsequent bake step. These lines were tempered stepwise until 300 °C. Up to a temperature of 200 °C, structures remain more or less unchanged

Process parameters


  • Resist
    AR-N 4400-10
  • Substrate
    Si 4“ Wafer
  • Tempering
    95 °C, 10 min, hot plate
  • Exposure
    Maskaligner MJB 3, Kontaktbelichtung
  • Development
    AR 300-47, pur, 3 min, 22 °C

Sensitivity




The sensitivity increases constantly with increasing bake temperatures (broadband UV Maskeliner, thickness 5.0 μm)

Resolution




At a film thickness of 5 μm, 1.0 μm bars were produced

Gradation curve




The gradation (contrast) is 3.5, the sensitivity was determined to 21.5 mJ/cm2 for a structure buildup of 90 % (H090)


Request for AR-N 4400 series

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