Photoresists are particularly employed in microelectronics and in microsystems technology to generate µm- and sub-µm structures.
Allresist covers a wide range of resist types for a multitude of applications.
Positive-tone photoresists produced by Allresist are composed of a combination of film formers like e.g. cresol novolac resins and photosensitive components like e.g. naphthoquinone diazide in solvents like e.g. methoxypropylacetate (PGMEA).
For the manufacture of negative-tone photoresists, in addition to novolac bisazide, acidifier and aminic compounds are dissolved in suitable solvents (e.g. methoxypropylacetate).
Protective coatings (polymeric PMMA, polymeric hydrocarbons) are used for intensive etching processes and prevent a destruction of the substrates.
Image reversal resists are positive resists with an additional amine. Depending on the manufacturing process, either positive or negative images may be generated. Furthermore available are resists for special applications like positive polyimide resists (high-temperature applications > 300 °C, polymer polyimide), negative PMMA photoresists (water-free development for sensitive substrates, polymer PMMA and cross-linker), positive and negative two-layer photoresists (lift-off technologies, polymer copolymer PMMA).