AR 300-26 Archive - Allresist EN https://www.allresist.com/portfolio_entries/ar-300-26/ ALLRESIST GmbH - Strausberg, Germany Thu, 30 Nov 2023 07:40:34 +0000 en-GB hourly 1 https://wordpress.org/?v=6.5.2 Photoresist SX AR-N 4340/7 https://www.allresist.com/portfolio-item/photoresist-sx-ar-n-4340-7/ Wed, 29 Nov 2023 09:51:14 +0000 https://www.allresist.com/?post_type=portfolio&p=18206 Negative photoresist for one- and two-layer systems, thermostable up to 300 °C

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SX AR-N 4340/7

Negative photoresist for one- and two-layer systems


Characterisation

  • i-line, g-line, deep UV (248-266 nm)
  • highest sensitivity, high resolution
  • good adhesion properties, high contrast, chemically enhanced
  • undercut profiles (lift-off) are possible
  • may be used with AR-BR 5400 as 2-layer system
  • plasma etching stabel, thermostable up to 300 °C
  • polyhydroxystyrene polymer, with photochemical acid generator and aminic crosslinker
  • Safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Film thickness/4000 rpm (μm)
    1.4 µm
  • Resolution (μm)
    0.7 µm
  • Contrast
    5.0
  • Flash point (°C)
    44 °C
  • Storage 6 month (°C)
    10 - 18 °C


Available order sizes


  • On request

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution




SX AR-N 4340/7: 0.7 µm resolution with a coating thickness of 1.4 µm.

 


Resist structures




SX AR-N 4340/7: Resist structures after 300 °C tempering.

 

Spin curve




Spin curve of SX AR-N 4340/7.


Process parameters


  • Substrate
    Si 4" Wafer
  • Tempering
    85 °C, 60 s, hot plate
  • Exposure
    i-line Stepper (NA: 0,65)
  • Development
    AR 300-475, 60 s, 22 °C


Request for SX AR-N 4340/7

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]]> Protective Coating SX AR-PC 5000/41 https://www.allresist.com/portfolio-item/protective-coating-sx-ar-pc-5000-41/ Mon, 17 Feb 2020 12:51:04 +0000 https://www.allresist.de?post_type=portfolio&p=10165 KOH and HF resistant protective coating for wafer backside protection

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Protective Coating SX AR-PC 5000/41

(Experimental sample/custom-made product)

KOH and HF resistant protective coating for wafer backside protection


Characterisation

  • not light-sensitive > 300 nm, no yellow light required
  • stable protective film for protecting the wafer backside during etching of the front up to 80 °C, e.g. with 40 % caustic potash, 50 % hydrofluoric acid, BOE
  • in two-layer system structurable with AR-P 3250 or AR-N 4400-05/10; plasma etching resistant
  • high-melting modified hydrocarbons
  • solvent ethylbenzene

Interesting Resist Wiki articles



Properties


  • Viscosity 25°C
    50 mPas
  • Film thickness/4.000 rpm
    5,0 µm
  • Resolution (2-Layer)
    20 µm
  • Contrast (2-Layer)
    1
  • Flash point
    15 °C
  • Storage 6 month
    15 - 22 °C

* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond that without guarantee until the label date.



Available order sizes


  • 1 x 100 ml
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Stopper X AR 600-60/1

For stopping the protective coating SX AR-PC 5000/41 after development with X AR 300-74/1, main component: Octane

Thinner X AR 300-74/1

For adjusting the coating thickness of the SX AR-PC 5000/41 protective coating

Resist structures




Two-layer structuring with SX AR-PC 5000/41 and AR-P 3250 (on the left resist mask, on the right after etching in glass)




5 μm thick layer with glass wafer provided by the IDM

Spin curve




Processing instructions

Coating:

A spin speed of 1000 rpm is recommended, since wafer edges are optimally protected due to the slight wrapping effect at a film thickness of approx. 10 μm during spin deposition.

Etch process:

The protective layer is not attacked over hours. Note: The protective film is not dissolved in acetone or isopropanol. For removal or cleaning of equipment, the respective thinner has to be used.


Request for SX AR-PC 5000/41

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]]> Photoresist AR-P 5300 series https://www.allresist.com/portfolio-item/photoresist-ar-p-5320/ Thu, 27 Jul 2017 13:55:46 +0000 https://www.allresist.de?post_type=portfolio&p=7609 Sensitive resists for the production of vapour deposition patterns by lift-off

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AR-P 5300 series

(AR-P 5320, AR-P 5350)

Sensitive resists for the production of vapour deposition patterns by lift-off


Characterisation

  • broadband UV, i-line, g-line
  • high photosensitivity, high resolution
  • good adhesion properties
  • for undercut structures for the production of evaporation samples, in particular of metal using lift-off techniques e.g. for conductor paths
  • plasma etching resistant, temperature stable up to 120 °C
  • combination of novolac and naphthoquinone diazide
  • safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Layer thickness/4.000 rpm:  5.0 µm
  • Resolution:                              2.0 µm
  • Contrast:                                 4.0
  • Flash point:                            44 °C
  • Storage:                                 10-18 °C

* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond this without guarantee until the label date.



Available order sizes (AR-P 5320 on request)


  • 1 x 100 ml (test sample)
  • 1 x 250 ml
  • 1 x 1.000 ml
  • 6 x 1.000 ml

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-35

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Resist structures




AR-P 5320: Lift-off resist structure after development.





AR-P 5350: Lift-off resist structure after metal vapour deposition



Process parameters


  • Substrate
    Si 4“ Wafer
  • Tempering
    105 °C, 4 min, hot plate
  • Exposure
    g-line stepper (NA: 0,56)
  • Development
    AR 300-35, 1 : 2, 60 s, 22 °C

Spin curve




Spin curve of the AR-P 5320 and AR-P 5350.


Request for AR-P 5300 series

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]]> Photoresist AR-P 3740 https://www.allresist.com/portfolio-item/photoresist-ar-p-3740/ Thu, 27 Jul 2017 13:50:48 +0000 https://www.allresist.de?post_type=portfolio&p=7596 Sensitive positive-tone standard resists for the production of highly integrated circuits

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AR-P 3740

Sensitive positive-tone standard resists for the production of highly integrated circuits


Characterisation

  • broadband UV, i-line, g-line
  • high sensitivity, highest resolution up to 0.4 μm
  • high contrast, excellent dimensional accuracy
  • optimised coating properties on topologically complex substrate surfaces
  • plasma etching resistant, stable up to 120 °C
  • combination of novolac and naphthoquinone diazide
  • Safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Film thickness / 4000 rpm (μm)
    1,4 µm
  • Resolution (μm)
    0,4 µm
  • Contrast
    6,0
  • Flash point (°C)
    42 °C
  • Storage 6 month (°C)
    10-18 °C


Available order sizes


  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution




Film thickness 1.1 μm Resist structures 0.5 μm L/S



Process parameters


  • Substrate
    Si 4“ Wafer
  • Tempering
    100 °C, 90 s, hot plate
  • Exposure
    i-line stepper (NA: 0,65)
  • Development
    AR 300-47, 60 s, 22 °C

Spin curve





Request for AR-P 3740

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]]> Photoresist AR-P 3500 (T) series https://www.allresist.com/portfolio-item/photoresist-ar-p-3510/ Thu, 27 Jul 2017 13:35:06 +0000 https://www.allresist.de?post_type=portfolio&p=7573 Sensitive positive-tone standard resists for the production of integrated circuits

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AR-P 3500 (T) series

(AR-P 3510, AR-P 3510 T, AR-P 3540, AR-P 3540 T)

Sensitive positive-tone standard resists for the production of integrated circuits


Characterisation

  • broadband UV, i-line, g-line
  • high photosensitivity, high resolution
  • very good adhesion properties
  • 3500 T: robust processing, suitable for TMAH developer 0.26 n
  • plasma etching resistant, temperature-stable up to 120 °C
  • combination of novolac and naphthoquinone diazide
  • Safer Solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Layer thickness/4000 rpm:          2.0 µm
  • Resolution:                                      0.8 µm
  • Contrast:                                          4.0
  • Flash point:                                     46 °C
  • Storage up to 6 months:               10-18 °C

* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond that without guarantee until the label date.



Available order sizes


  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-35

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution




AR-P 3540 T: Film thickness 1.5 μm, Resist structures 0.5 μm



Process parameters


  • Substrate
    Si 4“ Wafer
  • Tempering
    95 °C, 90 s, hot plate
  • Exposure
    g-line stepper (NA: 0,56)
  • Development
    AR 300-44, 60 s, 22 °C

Spin curve




Spin curve of the AR-P 3510/AR-P 3510 T and AR-P 3540/AR-P 3540 T


Request for AR-P 3500 (T) series

The post Photoresist AR-P 3500 (T) series appeared first on Allresist EN.

]]> Photoresist AR-P 3200 series https://www.allresist.com/portfolio-item/photoresist-ar-p-3250/ Thu, 27 Jul 2017 13:30:10 +0000 https://www.allresist.de?post_type=portfolio&p=7561 Thick positive resists for electroplating and microsystems technology

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AR-P 3200 series

(AR-P 3210, AR-P 3220, AR-P 3250(T)

Thick positive resists for electroplating and microsystems technology


Characterisation

  • broadband UV, i-line, g-line
  • high photosensitivity, high resolution
  • profiles with high edge steepness dimens. accuracy
  • plasma etch resistant, electroplating-stable
  •  AR-P 3210/AR-P 3250 for film thicknesses up to 40 μm / 20 μm
  • AR-P 3220 transparent for thick films up to 100μm in multiple coating steps, 100 μm development in one step
  • combination of novolac and naphthoquinone diazide
  • safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Layer thickness/4.000 rpm:  10 µm
  • Resolution:                              4.0 µm
  • Contrast:                                 2.0
  • Flash point:                            46 °C
  • Storage:                                 10-18 °C

* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond this without guarantee until the label date.



Available order sizes for AR-P 3250

(AR-P 3210, AR-P 3220, AR-P 3250 T on request)


  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution




AR-P 3210: Film thickness of 12 μm, resist structures of 4 μm


Spin curve




Spin curves of the AR-P 3210, AR-P 3220, AR-P 3250(T).

Resist structures




AR-P 3220: Layer thickness of 25 µm


Grey tone mask lithography




AR-P 3220: 28 μm-high 3D pyramids


Process parameters


  • Substrate
    Si 4“ Wafer
  • Tempering
    95 °C, 10-15 min, hot plate
  • Exposure
    Maskaligner MJB 3, Kontaktbelichtung
  • Development
    AR 300-26, 1 : 3, 3 min, 22 °C


Request for AR-P 3200 series

The post Photoresist AR-P 3200 series appeared first on Allresist EN.

]]> Photoresist AR-P 3100 series https://www.allresist.com/portfolio-item/photoresist-ar-p-3110/ Thu, 27 Jul 2017 13:05:13 +0000 https://www.allresist.de?post_type=portfolio&p=7550 Adhesion-enhanced positive resists for the production of masks and fine scale divisions

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AR-P 3100 series

(AR-P 3110, AR-P 3120, AR-P 3170)

Adhesion-enhanced positive resists for the production of masks and fine scale divisions


Characterisation

  • broadband UV, i-line, g-line
  • high photosensitivity, high resolution
  • strong adhesion to critical glass/chromium surfaces for extreme stresses during wet-chemical etching processes
  • for the production of CD masters and lattice structures
  • 3170 also suitable for laser interference lithography
  • plasma etching resistant
  • combination of novolac and naphthoquinone diazide
  • Safer Solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Film thickness/4000 rpm:  1000 nm
  • Resolution:                           0.5 µm
  • Contrast:                               3
  • Flash point:                         46 °C
  • Storage 6 month:              10-18 °C

* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond that without guarantee until the label date.



Available order sizes (AR-P 3110 on request)


  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-35

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

Remover AR 300-73

For the stripping of tempered photoresist and e-beam resist films

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution




AR-P 3120: Film thickness 0.6 μm Resist structures 0.38 μm L/S



Process parameters


  • Substrate
    Si 4“ Wafer
  • Tempering
    95 °C, 90 s, hot plate
  • Exposure
    i-line stepper (NA: 0,65)
  • Development
    AR 300-47, 1 : 1, 60 s, 22 °C

Resist structures




AR-P 3170: 70-nm-lines generated by laser interference lithography


Request for AR-P 3100 series

The post Photoresist AR-P 3100 series appeared first on Allresist EN.

]]> Photoresist AR-N 4340 (CAR) https://www.allresist.com/portfolio-item/photoresist-ar-n-4340-car/ Thu, 27 Jul 2017 12:20:46 +0000 https://www.allresist.de?post_type=portfolio&p=7685 Highly sensitive negative resist for the production of integrated circuits

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AR-N 4340

Highly sensitive negative resist for the production of integrated circuits


Characterisation

  • i-line, g-line
  • highest sensitivity, excellent resolution
  • good adhesion, high contrast, chemically enhanced
  • undercut profiles (lift-off) are possible
  • plasma etching resistant
  • temperature-stable up to 220 °C after subsequent treatment
  • novolac with photochemical acid generator and amine-based crosslinking agent
  • Safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Film thickness/4000 rpm (μm)
    1.4 µm
  • Resolution (μm)
    0.5 µm
  • Contrast
    5.0
  • Flash point (°C)
    44 °C
  • Storage 6 month (°C)
    10 - 18 °C


Available order sizes


  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-475

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-72

For the stripping of tempered photoresist and e-beam resist films

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution




Film thickness 1.4 μm Resist structure 0.7 μm L/S


Resist structures




AR-N 4340: Layer thickness 2.0 μm, resist structure 4.0 μm

Spin curve




Spin curve of AR-N 4340


Process parameters


  • Substrate
    Si 4" Wafer
  • Tempering
    85 °C, 60 s, hot plate
  • Exposure
    i-line Stepper (NA: 0,65)
  • Development
    AR 300-475, 60 s, 22 °C


Request for AR-N 4340

The post Photoresist AR-N 4340 (CAR) appeared first on Allresist EN.

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