AR 300-73 Archive - Allresist EN https://www.allresist.com/portfolio_entries/ar-300-73/ ALLRESIST GmbH - Strausberg, Germany Fri, 15 Mar 2024 06:27:55 +0000 en-GB hourly 1 https://wordpress.org/?v=6.5.2 Photoresist AR-P 3100 series https://www.allresist.com/portfolio-item/photoresist-ar-p-3110/ Thu, 27 Jul 2017 13:05:13 +0000 https://www.allresist.de?post_type=portfolio&p=7550 Adhesion-enhanced positive resists for the production of masks and fine scale divisions

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AR-P 3100 series

(AR-P 3110, AR-P 3120, AR-P 3170)

Adhesion-enhanced positive resists for the production of masks and fine scale divisions


Characterisation

  • broadband UV, i-line, g-line
  • high photosensitivity, high resolution
  • strong adhesion to critical glass/chromium surfaces for extreme stresses during wet-chemical etching processes
  • for the production of CD masters and lattice structures
  • 3170 also suitable for laser interference lithography
  • plasma etching resistant
  • combination of novolac and naphthoquinone diazide
  • Safer Solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Film thickness/4000 rpm:  1000 nm
  • Resolution:                           0.5 µm
  • Contrast:                               3
  • Flash point:                         46 °C
  • Storage 6 month:              10-18 °C

* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond that without guarantee until the label date.



Available order sizes (AR-P 3110 on request)


  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-35

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

Remover AR 300-73

For the stripping of tempered photoresist and e-beam resist films

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution




AR-P 3120: Film thickness 0.6 μm Resist structures 0.38 μm L/S



Process parameters


  • Substrate
    Si 4“ Wafer
  • Tempering
    95 °C, 90 s, hot plate
  • Exposure
    i-line stepper (NA: 0,65)
  • Development
    AR 300-47, 1 : 1, 60 s, 22 °C

Resist structures




AR-P 3170: 70-nm-lines generated by laser interference lithography


Request for AR-P 3100 series

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]]> Photoresist AR-P 1200 series https://www.allresist.com/portfolio-item/photoresist-ar-p-1210/ Thu, 27 Jul 2017 12:50:34 +0000 https://www.allresist.de?post_type=portfolio&p=7356 Ready-to-use positive spray resists for various applications

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AR-P 1200 series

Products on request

(AR-P 1210, AR-P 1220, AR-P 1230)

Ready-to-use positive spray resists for various applications


Characterisation

  • broadband UV, i-line, g-line
  • AR-P 1210: for a uniform coverage of vertical trenches
  • AR-P 1220: for etch profiles with 54° slopes
  • AR-P 1230: for planar wafers
  • good adhesion, smooth surface
  • combination of novolac and naphthoquinone diazide
  • safer solvent PGMEA as well as methyl ethyl ketone

Interesting Resist Wiki articles



Properties


  • Film thickness:                       4-10 µm
  • Resolution:                              1.0 µm
  • Contrast:                                   3.0
  • Flash point:                              -9 °C
  • Storage temperature:             10-18 °C

* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond that without guarantee until the label date.



Available order sizes


  • Products on request

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-44

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Structure resolution




Aluminium conductor paths after etching


Request for AR-P 1200 series

The post Photoresist AR-P 1200 series appeared first on Allresist EN.

]]> Photoresist AR-N 2200 series https://www.allresist.com/portfolio-item/photoresist-ar-n-2210/ Thu, 27 Jul 2017 12:05:16 +0000 https://www.allresist.de?post_type=portfolio&p=7363 Ready-to-use negative spray resists for various applications

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AR-N 2200 series

Products on demand

(AR-N 2210, AR-N 2220)

Ready-to-use negative spray resists for various applications


Characterisation

  • broadband UV, i-line, g-line
  • AR-N 2210 for a uniform coverage of vertical trenches
  • AR-N 2220 for etch profiles with 54° slopes
  • good adhesion, smooth surface
  • combination of novolac and naphthoquinone diazide
  • safer solvent PGMEA as well as methyl ethyl ketone

Interesting Resist Wiki articles



Properties


  • Film thickness:                       4-10 µm
  • Resolution:                              1.0 µm
  • Contrast:                                   3
  • Flash point:                              12 °C
  • Storage temperature:             10-18 °C

* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond that without guarantee until the label date.


Available order sizes


  • Product on request

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-44

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Structure resolution




AR-N 2210: Film thickness 5 μm, Resolution up to 1.4 μm



Process parameters


  • Substrate
    Si 6“ Wafer
  • Tempering
    82 °C, Chuck
  • Exposure
    Breitband (h-, g-, i-line)
  • Development
    AR 300-44, 4 min Puddle

Resist structures




AR-N 2220: 5 μm resist structures in 150 μm deep etch grooves

Science poster


Request for AR-N 2200 series

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]]> Bottom Resist AR-BR 5480 https://www.allresist.com/portfolio-item/bottom-resist-ar-br-5480/ Thu, 27 Jul 2017 12:00:41 +0000 https://www.allresist.de?post_type=portfolio&p=7677 Positive or negative system for optically transparent and thermally resistant structures

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Bottom Resist AR-BR 5480

Positive or negative system for optically transparent and thermally resistant structures


Characterisation

  • bottom resist not light sensitivity
  • broadband UV, i-line, g-line for top resist
  • for lift-off structures
  • for optically transparent structures from 270 nm to IR with thermally stable structures up to 250 °C
  • aqueous-alkaline development
  • temperature-stable up to 140 °C (with AR-P 3500)
  • 5400 copolymer methyl methacrylate/methacrylic acid
  • 3- safer solvent PM (5400), PGMEA (3500, 4340)

Interesting Resist Wiki articles



Properties


  • Film thickness/4000 rpm (μm)
    0,5 µm
  • Resolution top resist 2 L (μm)
    1,5
  • Flash point (°C)
    30 °C
  • Storage 6 month (°C)
    10 - 18 °C


Available order sizes


  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-73

For the stripping of tempered photoresist and e-beam resist films

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 600-07

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution of negative system




AR-BR 5480 – SX AR-N 4340/7 Finely adjusted lift-off undercut with negative resist



Process parameters


  • Substrate
    Si 4" Wafer
  • Tempering
    90 °C, 1 min, hot plate
  • Exposure
    g-line stepper (NA: 0,56)
  • Development
    AR 300-35, 1 : 1, 60 s, 22 °C

Spin curve




Request for AR-BR 5480

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]]> Bottom Resist AR-BR 5460 https://www.allresist.com/portfolio-item/bottom-resist-ar-br-5460/ Thu, 27 Jul 2017 11:55:59 +0000 https://www.allresist.de?post_type=portfolio&p=7663 Positive or negative system for optically transparent and thermally resistant structures

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Bottom Resist AR-BR 5460

Positive or negative system for optically transparent and thermally resistant structures


Characterisation

  • bottom resist not light sensitivity
  • broadband UV, i-line, g-line for top resist
  • for lift-off structures
  • for optically transparent structures from 270 nm to IR with thermally stable structures up to 250 °C
  • aqueous-alkaline development
  • temperature-stable up to 140 °C (with AR-P 3500)
  • 5400 copolymer methyl methacrylate/methacrylic acid
  • 3- safer solvent PM (5400), PGMEA (3500, 4340)

Interesting Resist Wiki articles



Properties


  • Film thickness/4000 rpm (μm)
    1,0 µm
  • Resolution top resist 2 L (μm)
    3,0
  • Flash point (°C)
    30 °C
  • Storage 6 month (°C)
    10 - 18 °C


Available order sizes


  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-73

For the stripping of tempered photoresist and e-beam resist films

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 600-07

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution of positive system




AR-BR 5460 – AR-P 3510 5 μm-bars of positive two-layer system after development



Process parameters


  • Substrate
    Si 4" Wafer
  • Tempering
    90 °C, 1 min, hot plate
  • Exposure
    g-line stepper (NA: 0,56)
  • Development
    AR 300-35, 1 : 1, 60 s, 22 °C

Spin curve




Request for AR-BR 5460

The post Bottom Resist AR-BR 5460 appeared first on Allresist EN.

]]> E-Beam Resist AR-N 7700 series https://www.allresist.com/portfolio-item/e-beam-resist-ar-n-7700-series/ Thu, 27 Jul 2017 10:15:56 +0000 https://www.allresist.de?post_type=portfolio&p=7989 High-resolution e-beam resists for the production of integrated circuits

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E-Beam Resist AR-N 7700 series

(AR-N 7700.08, AR-N 7700.18)

High-resolution e-beam resists for the production of integrated circuits


Characterisation

  • e-beam, deep UV; chemically enhanced (CAR)
  • 7700: high contrast for digital reproduction with excellent sensitivity
  • negative-tone with high resolution in the UV range 248-265 nm and 290-330 nm
  • plasma etching resistant, temp. stable up to 140 °C
  • novolac, acid generator, crosslinking agent
  • Safer Solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Film thickness/4000 rpm:     0,10 µm
  • Resolution best value:      80 nm
  • Contrast:                               5
  • Flash point:                        42 °C
  • Storage 6 month:     8-12 °C

Available order sizes


  • Product on request

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-46

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-73

For the stripping of tempered photoresist and e-beam resist films

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution




AR-N 7700.18 112 x 164 squares, film thickness of 400 nm



Process parameters


  • Substrate
    4“ Si-Wafer
  • Tempering

    85 °C, 90 s, hot plate

  • Exposure

    ZBA 21, 30 kV

  • Development

    AR 300-46, 60 s, 22 °C

Spin curve





Resist structures




AR-N 7700 500-nm dots, written with a dose of 12 μC/cm² (30 kV).


Request for AR-P 7700-Serie

The post E-Beam Resist AR-N 7700 series appeared first on Allresist EN.

]]> E-Beam Resist AR-N 7520 new series https://www.allresist.com/portfolio-item/e-beam-resist-ar-n-7520-new-series/ Thu, 27 Jul 2017 10:10:14 +0000 https://www.allresist.de?post_type=portfolio&p=7977 Highest resolution and highly sensitive resist for mix & match, thermostable up to 140 °C

The post E-Beam Resist AR-N 7520 new series appeared first on Allresist EN.

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E-Beam Resist AR-N 7520 new series

(AR-N 7520.07 new, AR-N 7520.11 new, AR-N 7520.17 new)

Highest resolution and highly sensitive resist for mix & match


Characterisation

  • e-beam, deep UV, i-line (formerly SX AR-N 7520/4)
  • short writing times, very high contrast
  • mix & match processes between e-beam and UV exposure 248-365 nm, negative in the UV range
  • highest resolution, very process-stable (no CAR)
  • plasma etching resistant, temp.-stable up to 140 °C
  • novolac, organic crosslinking agent
  • safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Film thickness/4.000 rpm:     0,10 µm
  • Resolution best value:            30 nm
  • Contrast:                                   8
  • Flashpoint:                               42 °C
  • Storage 6 month:                  10-18 °C

Available order sizes


  • 100 ml
  • 250 ml
  • 1 x 1000 ml
  • 6 x 1000 ml

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-46

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-73

For the stripping of tempered photoresist and e-beam resist films

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution




AR-N 7520.07 new: 30-nm lines at a film thickness of 90 nm



Process parameters


  • Substrate
    Si 4“ waver
  • Soft bake

    85 °C, 90 s, hot plate

  • Exposure

    Raith Pioneer, 30 kV

  • Development

    AR 300-47, 60 s, 22 °C

Spin curve





Resist structures




AR-N 7520.17 new: 400- and 600-nm lines, film thickness 400 nm


Request for AR-P 7520 new series

The post E-Beam Resist AR-N 7520 new series appeared first on Allresist EN.

]]> E-Beam Resist AR-N 7520 series https://www.allresist.com/portfolio-item/e-beam-resist-ar-n-7520-series/ Thu, 27 Jul 2017 10:05:30 +0000 https://www.allresist.de?post_type=portfolio&p=7984 High resolution resist for mix & match-processes, for high-precision edges, thermo-stable up to 140 °C

The post E-Beam Resist AR-N 7520 series appeared first on Allresist EN.

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E-Beam Resist AR-N 7520 series

(AR-N 7520.073, AR-N 7520.18)

High resolution resist for mix & match-processes, for high-precision edges


Characterisation

  • e-beam, deep UV, i-line
  • very high contrast, excellent transfer of structures, high-precision edges
  • mix & match processes between e-beam and UV exposure 248-365 nm
  • highest resolution, very process-stable (no CAR)
  • plasma etching resistant, temp.-stable up to 140 °C
  • novolac, organic crossl. agent, safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Film thickness/4.000 rpm:     0,10 µm
  • Resolution best value:           28 nm
  • Contrast:                                  10
  • Flash point:                             42 °C
  • Storage 6 month:                  10-18 °C

Available order sizes


Product on request


Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-46

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-73

For the stripping of tempered photoresist and e-beam resist films

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution




400 nm lines with AR-N 7520.073



Process parameter


  • Substrate
    Si 4“ waver
  • Soft bake

    85 °C, 90 s, hot plate

  • Exposure

    Raith Pioneer 30 kV

  • Development

    AR 300-47, 60 s, 22 °C

Spin curve




Resist structures




1 μm line with high-precision edges, AR-N 7520.18, resist thickness 340 nm, 1.400 μC/cm², 100 kV


Request for AR-N 7520 series

The post E-Beam Resist AR-N 7520 series appeared first on Allresist EN.

]]> E-Beam Resist AR-N 7500 series https://www.allresist.com/portfolio-item/e-beam-resist-ar-n-7500-series/ Thu, 27 Jul 2017 10:00:43 +0000 https://www.allresist.de?post_type=portfolio&p=7972 High resolution, process-stable (no CAR) resist for mix & match-processes, temperature stable up to 120 °C

The post E-Beam Resist AR-N 7500 series appeared first on Allresist EN.

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E-Beam Resist AR-N 7500 series

Product on demand

(AR-N 7500.08, AR-N 7500.18)

High resolution, process-stable resist for mix & match-processes


Characterisation

  • e-beam, deep UV, i-line, g-line
  • intermediate sensitivity
  • mix & match-processes between e-beam and UV exposure 310 – 450 nm, positive or negative depending on the exposure wavelength chosen
  • high resolution, process-stable (no CAR)
  • plasma etching resistant, temp.-stable up to 120 °C
  • novolac, naphthoquin. diazide, organic crosslink. a.
  • safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Film thickness/4.000 rpm:     0,10 µm
  • Resolution best value:           40 nm
  • Contrast:                                  5
  • Flashpoint:                              42 °C
  • Storage 6 month:                   10-18 °C

Available order sizes


  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1000 ml
  • 6 x 1000 ml

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-73

For the stripping of tempered photoresist and e-beam resist films

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution




AR-N 7500.18: Film thickness 400 nm lattice with 70 nm lines



Process parameters


  • Substrate
    Si 4“ waver
  • Soft bake

    85 °C, 90 s, hot plate

  • Exposure

    ZBA 21, 30 kV

  • Development

    AR 300-47, 4 : 1, 60 s, 22 °C

Spin curve




Resist structures




AR-N 7500.18: rows of cylinders with a diameter of 500 nm


Request for AR-P 7500 series

The post E-Beam Resist AR-N 7500 series appeared first on Allresist EN.

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