product group Archive - Allresist EN https://www.allresist.com/portfolio_entries/product-group/ ALLRESIST GmbH - Strausberg, Germany Fri, 15 Mar 2024 06:27:01 +0000 en-GB hourly 1 https://wordpress.org/?v=6.5.2 Photoresist SX AR-N 4340/7 https://www.allresist.com/portfolio-item/photoresist-sx-ar-n-4340-7/ Wed, 29 Nov 2023 09:51:14 +0000 https://www.allresist.com/?post_type=portfolio&p=18206 Negative photoresist for one- and two-layer systems, thermostable up to 300 °C

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SX AR-N 4340/7

Negative photoresist for one- and two-layer systems


Characterisation

  • i-line, g-line, deep UV (248-266 nm)
  • highest sensitivity, high resolution
  • good adhesion properties, high contrast, chemically enhanced
  • undercut profiles (lift-off) are possible
  • may be used with AR-BR 5400 as 2-layer system
  • plasma etching stabel, thermostable up to 300 °C
  • polyhydroxystyrene polymer, with photochemical acid generator and aminic crosslinker
  • Safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Film thickness/4000 rpm (μm)
    1.4 µm
  • Resolution (μm)
    0.7 µm
  • Contrast
    5.0
  • Flash point (°C)
    44 °C
  • Storage 6 month (°C)
    10 - 18 °C


Available order sizes


  • On request

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution




SX AR-N 4340/7: 0.7 µm resolution with a coating thickness of 1.4 µm.

 


Resist structures




SX AR-N 4340/7: Resist structures after 300 °C tempering.

 

Spin curve




Spin curve of SX AR-N 4340/7.


Process parameters


  • Substrate
    Si 4" Wafer
  • Tempering
    85 °C, 60 s, hot plate
  • Exposure
    i-line Stepper (NA: 0,65)
  • Development
    AR 300-475, 60 s, 22 °C


Request for SX AR-N 4340/7

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]]> Developer X AR 600-50/2 https://www.allresist.com/portfolio-item/developer-x-ar-600-50-2/ Thu, 16 Nov 2023 07:20:25 +0000 https://www.allresist.com/?post_type=portfolio&p=18198 High-purity and ultra-fine filtered developer for selective T-gate applications

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Developer X AR 600-50/2

High-purity and ultra-fine filtered developer for selective T-gate applications

Characterisation


  • ultrapure, ultra-filtered (0.2 μm) solvent mixture
  •  storage at 10-22 °C for 6 month
  • Main component(s): Ethanol

Interesting Resist Wiki articles



Properties


  • Refractive index at 20 °C
    1,366
  • Flash point (°C)
    12 °C

Available order sizes


  • 1 x 1.000 ml

Please contact us for further requests.

Suitable products

E-Beam Resist AR-P 617 series

Resists for nanometer lithography, highest resolution, Copolymer 33% MA, Solvent: methoxypropanol


Request for X AR 600-50/2

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]]> Thinner X AR 300-74/1 https://www.allresist.com/portfolio-item/thinner-x-ar-300-74-1/ Thu, 16 Nov 2023 07:17:02 +0000 https://www.allresist.com/?post_type=portfolio&p=18195 For adjusting the coating thickness of the SX AR-PC 5000/41 protective coating

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Thinner X AR 300-74/1

For adjusting the coating thickness of the SX AR-PC 5000/41 protective coating

Characterisation


  • ultra-filtered, organic solvent mixture of high purity
  • Coating thickness adjustment of SX AR-PC 5000/41 through defined dilution
  • Edge stripping of coated substrates and device cleaning

Interesting Resist Wiki articles



Properties



  • Main component
    Ethylbenzene
  • Flash point (°C)
    15°C
  • Water content max.
    0,1%
  • Filtration (μm)
    0,2
  • Non-volatiles max. (%)
    20 ppm

Available order sizes



  • 1 x 1.000 ml

Please contact us for further requests

Suitable products


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Stopper X AR 600-60/1

For stopping the protective coating SX AR-PC 5000/41 after development with X AR 300-74/1, main component: Octane

Thinner X AR 300-74/1

For adjusting the coating thickness of the SX AR-PC 5000/41 protective coating


Request for X AR 300-74/1

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]]> Stopper X AR 600-60/1 https://www.allresist.com/portfolio-item/stopper-x-ar-600-60-1/ Thu, 16 Nov 2023 07:09:48 +0000 https://www.allresist.com/?post_type=portfolio&p=18191 For stopping the protective coating SX AR-PC 5000/41 after development with X AR 300-74/1, main component: Octane

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Stopper X AR 600-60/1

For stopping the protective coating SX AR-PC 5000/41 after development with X AR 300-74/1

Characterisation


  • Immediate interruption of development
  • High-purity solvent mixture for residue-free removal of developer residues from X AR 300-74/1
  • The development process can be slowed down by adding 10-20 % of the stopper X AR 600-60/1 to the developer X AR 300-74/1

Interesting Resist Wiki articles



Properties


  • Density at 20 °C (g/cm³)
    0,703 g/cm³
  • Flash point (°C)
    13 °C
  • Filtration (μm)
    0,2 µm
  • Storage up to 6 month (°C)
    10-22 °C

Available order sizes


  • 1 x 1.000 ml

Please contact us for further requests.

Suitable products

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Stopper X AR 600-60/1

For stopping the protective coating SX AR-PC 5000/41 after development with X AR 300-74/1, main component: Octane

Thinner X AR 300-74/1

For adjusting the coating thickness of the SX AR-PC 5000/41 protective coating


Request for X AR 600-60/1

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]]> Protective Coating AR-PC 5092.02 (Electra 92) https://www.allresist.com/portfolio-item/protective-coating-ar-pc-5092-02-electra-92/ Tue, 08 Aug 2023 07:31:37 +0000 https://www.allresist.com/?post_type=portfolio&p=18093 Conductive protective coating for e-beam resists. Top layer for the dissipation of e-beam charges on insulating substrates.

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Protective Coating Electra 92 (AR-PC 5092)

Conductive protective coating for e-beam resists

Top layer for the dissipation of e-beam charges on insulating substrates


Characterisation

  • as protective coating, this resist is not sensitive to light / radiation
  • thin, conductive layers for the dissipation of charges during electron exposure
  • coating of non-novolac PMMA, CSAR 62, Novolac, Medusa 82, et al.
  • longterm-stable
  • easy removal with water after exposure
  • polyaniline-derivative dissolved in water

Interesting Resist Wiki articles



Properties



* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond this without guarantee until the label date.



Suitable process chemicals


  • Remover
    DI-Wasser

REM dissipation of charges




200 nm-squares written on quartz without distortion caused by charges with AR-P 662.04 and AR-PC 5092.02



Process parameters


  • Substrate
    4“ Quarz-Wafer mit AR-P 662.04
  • Coating
    2000 rpm, 60 nm auf E-Beamresist
  • Tempering
    85 °C

Conductivity




Conductivity measurements of the spin-coated layers of the AR-PC 5092.02. With thinner layers, the resistance increases and the conductivity decreases.



Available order sizes


  • 1 x 30 ml (experimental sample)
  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

CSAR 62 on glass + Electra 92




Fig.: 30 – 150 nm squares of the CSAR 62 on glass.

The combination of CSAR 62 with AR-PC 5090.02 offers the best possibilities to perform complicated e-beam patterning on glass, quartz or semi-insulating substrates such as gallium arsenide. The very good sensitivity and highest resolution of the CSAR are harmoniously complemented by the conductivity of the Electra.

PMMA-lift-off on glass with Electra 92




200 nm squares produced with 2-layer PMMA lift-off

Initially, the PMMA resist AR-P 669.04 (200 nm thickness) was coated on a quartz substrate and tempered. The second PMMA resist AR-P 679.03 was then applied (150 nm thickness) and tempered, followed by coating with Electra 92. After exposure, Electra 92 was removed with water, the PMMA structures were developed (AR 600-56) and the substrate vaporised with titanium/gold. After a liftoff with acetone, the desired squares remained on the glass with high precision.


Request for AR-PC 5092.02 (Electra 92)

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]]> E-Beam Resist SX AR-N 8250 series (Medusa 82) https://www.allresist.com/portfolio-item/e-beam-resist-sx-ar-n-8250-series-medusa-82-2/ Fri, 16 Oct 2020 11:38:49 +0000 https://www.allresist.com/?post_type=portfolio&p=16051 Comparable to HSQ, but more process-stable, more sensitive by a factor of 20

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E-Beam Resist SX AR-N 8250 series (Medusa 82)

(SX AR-N 8250.03,  SX AR-N 8250.06,  SX AR-N 8250.18)

Experimental sample/custom-made product


Characterisation

  • high-resolution e-beam resist, also sensitive in EUV (13.5 nm) and DUV (250 nm) range
  • comparable to HSQ, but with by a factor of 20 higher sensitivity, easier to remove
  • considerably higher shelf life
  • silsesquioxane and acid generator dissolved in 1-methoxy-2-propanol

Interesting Resist Wiki articles



Properties


  • Film thickness/4000 rpm:  50 nm
  • Resolution best value:       15 nm
  • Contrast:                               8
  • Flash point:                         38 °C
  • Storage 6 month:              8-12 °C


Available order sizes



  • 1x 30 ml (experimental sample)
  • 1 x 100 ml
  • 1 x 250 ml
  • 1 x 1000 ml

Please contact us for further requests.

Suitable process chemicals


Developer AR 300-44

For the development of photoresists and novolac-based e-beam resist films

Thinner AR 600-07

For adjusting the film thickness of photoresists and e-beam resists

Resist structures



Medusa 82 UV structure with higher sensitivity


Medusa product presentation



Request for SX AR-N 8250 Series

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]]> E-Beam Resist SX AR-N 8200 series (Medusa 82) https://www.allresist.com/portfolio-item/e-beam-resist-sx-ar-n-8200-series-medusa-82/ Tue, 13 Oct 2020 07:27:39 +0000 https://www.allresist.com/?post_type=portfolio&p=16006 Experimental sample/custom-made product

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E-Beam Resist SX AR-N 8200 series (Medusa 82)

(SX AR-N 8200.03,  SX AR-N 8200.06,  SX AR-N 8200.18)

Experimental sample/custom-made product


Characterisation

  • high-resolution e-beam resist (10 nm)
  • etch-stable resist structures available in two film thicknesses
  • comparable to HSQ, but higher process stability, easier to remove, considerably higher shelf life
  • sensitivity is increased by a factor of 20 if an additional tempering step is applied
  • silsesquioxane dissolved in 1-methoxy-2-propanol

Interesting Resist Wiki articles



Properties


  • Film thickness/4000 rpm:  50 nm
  • Resolution best value:       10 nm
  • Contrast:                               5
  • Flash point:                         38 °C
  • Storage 6 month:              8-12 °C


Available order sizes



  • 1x 30 ml (experimental sample)
  • 1 x 100 ml
  • 1 x 250 ml
  • 1 x 1000 ml

Please contact us for further requests.

Suitable process chemicals


Developer AR 300-44

For the development of photoresists and novolac-based e-beam resist films

Thinner AR 600-07

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution



11 nm structures produced with SX AR-N 8200.03/1

Resist structures



100 nm bars with SX AR-N 8200.06/1


Medusa product presentation



Request for SX AR-N 8200 Series

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]]> Photoresist SX AR-P 3500/8 https://www.allresist.com/portfolio-item/photoresist-sx-ar-p-3500-8/ Mon, 17 Feb 2020 13:49:51 +0000 https://www.allresist.de?post_type=portfolio&p=10199 Positive photoresist for high-temperature application up to 300 °C

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Photoresist SX AR-P 3500/8

Product on demand

(Experimental sample/custom-made product)

Positive photoresist for high-temperature application up to 300 °C


Characterisation

  • broadband, i-line, g-line
  • high plasma resistant, thermally stable up to 300 °C
  • suitable for: high-temperature 2-layer lift-off processes as well as plasma etching and implantation processes
  • combination of poly(hydroxystyrene-co-MMA)-naphthoquinone diazide
  • safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Viscosity 25°C
    20 mPas
  • Film thickness/4.000 rpm
    1,4 µm
  • Resolution
    0,8 µm
  • Contrast
    3,0
  • Flash point
    42 °C
  • Storage 6 month
    10 - 18 °C


Available order sizes


  • Product on request

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Resist structures




7 μm trenches with SX AR-P 3500/8





10 μm webs of SX AR-P 3500/8 after a hard bake of 280 °C

Spin curve




Process parameters


  • Substrate
    Si 4" wafer
  • Tempering
    95 °C, 2 min, hot plate
  • Exposure
    i-line stepper (NA: 0,56)
  • Development
    AR 300-47, 1 : 1, 1 min, 22 °C


Request for SX AR-P 3500/8

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]]> Protective Coating SX AR-PC 5000/41 https://www.allresist.com/portfolio-item/protective-coating-sx-ar-pc-5000-41/ Mon, 17 Feb 2020 12:51:04 +0000 https://www.allresist.de?post_type=portfolio&p=10165 KOH and HF resistant protective coating for wafer backside protection

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Protective Coating SX AR-PC 5000/41

(Experimental sample/custom-made product)

KOH and HF resistant protective coating for wafer backside protection


Characterisation

  • not light-sensitive > 300 nm, no yellow light required
  • stable protective film for protecting the wafer backside during etching of the front up to 80 °C, e.g. with 40 % caustic potash, 50 % hydrofluoric acid, BOE
  • in two-layer system structurable with AR-P 3250 or AR-N 4400-05/10; plasma etching resistant
  • high-melting modified hydrocarbons
  • solvent ethylbenzene

Interesting Resist Wiki articles



Properties


  • Viscosity 25°C
    50 mPas
  • Film thickness/4.000 rpm
    5,0 µm
  • Resolution (2-Layer)
    20 µm
  • Contrast (2-Layer)
    1
  • Flash point
    15 °C
  • Storage 6 month
    15 - 22 °C

* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond that without guarantee until the label date.



Available order sizes


  • 1 x 100 ml
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Stopper X AR 600-60/1

For stopping the protective coating SX AR-PC 5000/41 after development with X AR 300-74/1, main component: Octane

Thinner X AR 300-74/1

For adjusting the coating thickness of the SX AR-PC 5000/41 protective coating

Resist structures




Two-layer structuring with SX AR-PC 5000/41 and AR-P 3250 (on the left resist mask, on the right after etching in glass)




5 μm thick layer with glass wafer provided by the IDM

Spin curve




Processing instructions

Coating:

A spin speed of 1000 rpm is recommended, since wafer edges are optimally protected due to the slight wrapping effect at a film thickness of approx. 10 μm during spin deposition.

Etch process:

The protective layer is not attacked over hours. Note: The protective film is not dissolved in acetone or isopropanol. For removal or cleaning of equipment, the respective thinner has to be used.


Request for SX AR-PC 5000/41

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]]> Photoresist AR-N 4600 series (Atlas 46) https://www.allresist.com/portfolio-item/photoresist-ar-n-4600-serie/ Mon, 17 Feb 2020 11:26:34 +0000 https://www.allresist.de?post_type=portfolio&p=10150 Thick negative resists for electroplating, microsystems technologies and LIGA < 20 μm

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AR-N 4600 Photo resist series (Atlas 46)

Extreme stable resist structures, thick thickness, adequate SU-8


Characterization

•i-line, broadband UV
• very good adhesion properties
• very high sensitivity
• 4600-10 for stable layers of 5 μm – 15 μm
• 4650-10 for removable layers of 5 μm – 15 μm
• further film thicknesses up to about 200 μm
available on request
• poly[(o-cresyl glycidyl ether)-co-formaldehyde]
and acid generator
• safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Viscosity 25C:                    172 mPas
  • Film thickness/4.000 rpm:     10 µm
  • Resolution best value:                2 µm
  • Contrast:                                4
  • Flashpoint:                        46 °C
  • Storage 6 month:       11-22 °C


Available order sizes


  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Process parameters


Stopper AR 600-60

For the stopping of e-beam resist film development with solvents

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists


Suitable process chemicals


  • AR 600-70:     fast
  • AR 300-12:     middle
  • AR 600-07:     slow

Resist structures




Atlas S (© Martin-Luther-Universität Halle-Wittenberg)





Atlas R (© Martin-Luther-Universität Halle-Wittenberg)

Spin curve




Process parameters


  • Substrat
    Si 4" Wafer
  • Temperung
    95 °C, 5 min, Hotplate
  • Belichtung
    Breitband-UV, Soft-contact
  • Entwicklung
    AR 300-12 pur, 120 s, 20 °C

Additional information

Processing

Layer thickness values of Atlas R and Atlas S are preadjusted to 10 μm at a spin speed of 1000 rpm. It is recommended to perform the subsequent tempering step on the hotplate at 95 °C for 5 min. Temperature ramps or stepwise drying, e.g. 65 °C for 2 minutes, followed by 95 °C for 4 minutes, can improve the resolution. Both resists can be structured by i-line or broadband UV exposure. Prior to irradiation, substrates should be cooled to room temperature. It is recommended to perform the following tempering step for cross-linking on the hotplate at 105 °C for 2 min. Ramps or stepwise cross-linking procedures like e.g. 65
°C for 2 minutes, followed by 95 °C for 7 minutes and 105 °C for 2 minutes, can improve the resolution. In
general, the stability of resists increases with higher temperatures and longer bake times, but this requires on the
other side longer development times. The use of temperature ramps is also recommended for cooling since
cooling too fast may result in stress cracking.

Development

AR 300-12 is recommended as standard developer, but also AR 600-07 (fast development) or AR 600-70 (gentle development) is suitable. If AR-N 4600-10 (S) is used for development, no dark erosion is observed even after comparably long development times. If the development with AR 300-12 is performed for too long, increased dark erosion of AR-N 4650-10 may result, and a too
long development with AR 600-70 can even cause complete removal. Stopper AR 600-60 is recommended for a particularly
residue-free rinsing after development, followed by rinsing with DI water. It is also possible to rinse resist layers
immediately after development directly with DI water and to dry them on the hotplate. The sensitivity for a layer thickness of 10 μm is about 110 – 160 mJ/cm2 in the broadband UV range (process description on page 3).

Removal

Coated structures of AR-N 4650-10 (R) can be removed with thinner AR 300-12 or AR 600-70. Depending on the degree of cross-linking (dose, temperature and bake time), required removal times may be considerably longer than 30 minutes.

UV-VIS-NIR



UV/VIS spectra of 10 μm layers Atlas S and Atlas R in comparison
to SU-8



UV/VIS spectra of Atlas 46. Yellowing caused by varying the duration
of broadband UV exposure after curing.

Imprinting



Combined nano- and microstructures, produced by imprinting of
AR-N 4600 (© Uni Wuppertal)



Close-up view of AR-N 4600 (© Uni Wuppertal)

Differential Scanning Calorimetry (DSC)



Dynamic differential scanning calorimetry (DSC) of polymers used (left Atlas S, right Atlas R)



Dynamic differential scanning calorimetry (DSC) of polymers used (left Atlas S, right Atlas R)

Bridges



Bridge structure of two-layer system with AR-N 4600-10 (bottom)
and SX AR-N 4620-10/1 (top)



Process description of “bridge construction” with AR-N 4600-10
(bottom, BB-UV) and SX AR-N 4620-10/1 (top, g-line)


Anfrage zur AR-N 4600-Serie

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