Photoresist Archive - Allresist EN https://www.allresist.com/portfolio_entries/produkte-photoresists/ ALLRESIST GmbH - Strausberg, Germany Thu, 30 Nov 2023 07:40:34 +0000 en-GB hourly 1 https://wordpress.org/?v=6.5.2 Photoresist SX AR-N 4340/7 https://www.allresist.com/portfolio-item/photoresist-sx-ar-n-4340-7/ Wed, 29 Nov 2023 09:51:14 +0000 https://www.allresist.com/?post_type=portfolio&p=18206 Negative photoresist for one- and two-layer systems, thermostable up to 300 °C

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SX AR-N 4340/7

Negative photoresist for one- and two-layer systems


Characterisation

  • i-line, g-line, deep UV (248-266 nm)
  • highest sensitivity, high resolution
  • good adhesion properties, high contrast, chemically enhanced
  • undercut profiles (lift-off) are possible
  • may be used with AR-BR 5400 as 2-layer system
  • plasma etching stabel, thermostable up to 300 °C
  • polyhydroxystyrene polymer, with photochemical acid generator and aminic crosslinker
  • Safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Film thickness/4000 rpm (μm)
    1.4 µm
  • Resolution (μm)
    0.7 µm
  • Contrast
    5.0
  • Flash point (°C)
    44 °C
  • Storage 6 month (°C)
    10 - 18 °C


Available order sizes


  • On request

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution




SX AR-N 4340/7: 0.7 µm resolution with a coating thickness of 1.4 µm.

 


Resist structures




SX AR-N 4340/7: Resist structures after 300 °C tempering.

 

Spin curve




Spin curve of SX AR-N 4340/7.


Process parameters


  • Substrate
    Si 4" Wafer
  • Tempering
    85 °C, 60 s, hot plate
  • Exposure
    i-line Stepper (NA: 0,65)
  • Development
    AR 300-475, 60 s, 22 °C


Request for SX AR-N 4340/7

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]]> Photoresist SX AR-P 3500/8 https://www.allresist.com/portfolio-item/photoresist-sx-ar-p-3500-8/ Mon, 17 Feb 2020 13:49:51 +0000 https://www.allresist.de?post_type=portfolio&p=10199 Positive photoresist for high-temperature application up to 300 °C

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Photoresist SX AR-P 3500/8

Product on demand

(Experimental sample/custom-made product)

Positive photoresist for high-temperature application up to 300 °C


Characterisation

  • broadband, i-line, g-line
  • high plasma resistant, thermally stable up to 300 °C
  • suitable for: high-temperature 2-layer lift-off processes as well as plasma etching and implantation processes
  • combination of poly(hydroxystyrene-co-MMA)-naphthoquinone diazide
  • safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Viscosity 25°C
    20 mPas
  • Film thickness/4.000 rpm
    1,4 µm
  • Resolution
    0,8 µm
  • Contrast
    3,0
  • Flash point
    42 °C
  • Storage 6 month
    10 - 18 °C


Available order sizes


  • Product on request

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Resist structures




7 μm trenches with SX AR-P 3500/8





10 μm webs of SX AR-P 3500/8 after a hard bake of 280 °C

Spin curve




Process parameters


  • Substrate
    Si 4" wafer
  • Tempering
    95 °C, 2 min, hot plate
  • Exposure
    i-line stepper (NA: 0,56)
  • Development
    AR 300-47, 1 : 1, 1 min, 22 °C


Request for SX AR-P 3500/8

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]]> Photoresist AR-N 4600 series (Atlas 46) https://www.allresist.com/portfolio-item/photoresist-ar-n-4600-serie/ Mon, 17 Feb 2020 11:26:34 +0000 https://www.allresist.de?post_type=portfolio&p=10150 Thick negative resists for electroplating, microsystems technologies and LIGA < 20 μm

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AR-N 4600 Photo resist series (Atlas 46)

Extreme stable resist structures, thick thickness, adequate SU-8


Characterization

•i-line, broadband UV
• very good adhesion properties
• very high sensitivity
• 4600-10 for stable layers of 5 μm – 15 μm
• 4650-10 for removable layers of 5 μm – 15 μm
• further film thicknesses up to about 200 μm
available on request
• poly[(o-cresyl glycidyl ether)-co-formaldehyde]
and acid generator
• safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Viscosity 25C:                    172 mPas
  • Film thickness/4.000 rpm:     10 µm
  • Resolution best value:                2 µm
  • Contrast:                                4
  • Flashpoint:                        46 °C
  • Storage 6 month:       11-22 °C


Available order sizes


  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Process parameters


Stopper AR 600-60

For the stopping of e-beam resist film development with solvents

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists


Suitable process chemicals


  • AR 600-70:     fast
  • AR 300-12:     middle
  • AR 600-07:     slow

Resist structures




Atlas S (© Martin-Luther-Universität Halle-Wittenberg)





Atlas R (© Martin-Luther-Universität Halle-Wittenberg)

Spin curve




Process parameters


  • Substrat
    Si 4" Wafer
  • Temperung
    95 °C, 5 min, Hotplate
  • Belichtung
    Breitband-UV, Soft-contact
  • Entwicklung
    AR 300-12 pur, 120 s, 20 °C

Additional information

Processing

Layer thickness values of Atlas R and Atlas S are preadjusted to 10 μm at a spin speed of 1000 rpm. It is recommended to perform the subsequent tempering step on the hotplate at 95 °C for 5 min. Temperature ramps or stepwise drying, e.g. 65 °C for 2 minutes, followed by 95 °C for 4 minutes, can improve the resolution. Both resists can be structured by i-line or broadband UV exposure. Prior to irradiation, substrates should be cooled to room temperature. It is recommended to perform the following tempering step for cross-linking on the hotplate at 105 °C for 2 min. Ramps or stepwise cross-linking procedures like e.g. 65
°C for 2 minutes, followed by 95 °C for 7 minutes and 105 °C for 2 minutes, can improve the resolution. In
general, the stability of resists increases with higher temperatures and longer bake times, but this requires on the
other side longer development times. The use of temperature ramps is also recommended for cooling since
cooling too fast may result in stress cracking.

Development

AR 300-12 is recommended as standard developer, but also AR 600-07 (fast development) or AR 600-70 (gentle development) is suitable. If AR-N 4600-10 (S) is used for development, no dark erosion is observed even after comparably long development times. If the development with AR 300-12 is performed for too long, increased dark erosion of AR-N 4650-10 may result, and a too
long development with AR 600-70 can even cause complete removal. Stopper AR 600-60 is recommended for a particularly
residue-free rinsing after development, followed by rinsing with DI water. It is also possible to rinse resist layers
immediately after development directly with DI water and to dry them on the hotplate. The sensitivity for a layer thickness of 10 μm is about 110 – 160 mJ/cm2 in the broadband UV range (process description on page 3).

Removal

Coated structures of AR-N 4650-10 (R) can be removed with thinner AR 300-12 or AR 600-70. Depending on the degree of cross-linking (dose, temperature and bake time), required removal times may be considerably longer than 30 minutes.

UV-VIS-NIR



UV/VIS spectra of 10 μm layers Atlas S and Atlas R in comparison
to SU-8



UV/VIS spectra of Atlas 46. Yellowing caused by varying the duration
of broadband UV exposure after curing.

Imprinting



Combined nano- and microstructures, produced by imprinting of
AR-N 4600 (© Uni Wuppertal)



Close-up view of AR-N 4600 (© Uni Wuppertal)

Differential Scanning Calorimetry (DSC)



Dynamic differential scanning calorimetry (DSC) of polymers used (left Atlas S, right Atlas R)



Dynamic differential scanning calorimetry (DSC) of polymers used (left Atlas S, right Atlas R)

Bridges



Bridge structure of two-layer system with AR-N 4600-10 (bottom)
and SX AR-N 4620-10/1 (top)



Process description of “bridge construction” with AR-N 4600-10
(bottom, BB-UV) and SX AR-N 4620-10/1 (top, g-line)


Anfrage zur AR-N 4600-Serie

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]]> Photoresist AR-P 5300 series https://www.allresist.com/portfolio-item/photoresist-ar-p-5320/ Thu, 27 Jul 2017 13:55:46 +0000 https://www.allresist.de?post_type=portfolio&p=7609 Sensitive resists for the production of vapour deposition patterns by lift-off

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AR-P 5300 series

(AR-P 5320, AR-P 5350)

Sensitive resists for the production of vapour deposition patterns by lift-off


Characterisation

  • broadband UV, i-line, g-line
  • high photosensitivity, high resolution
  • good adhesion properties
  • for undercut structures for the production of evaporation samples, in particular of metal using lift-off techniques e.g. for conductor paths
  • plasma etching resistant, temperature stable up to 120 °C
  • combination of novolac and naphthoquinone diazide
  • safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Layer thickness/4.000 rpm:  5.0 µm
  • Resolution:                              2.0 µm
  • Contrast:                                 4.0
  • Flash point:                            44 °C
  • Storage:                                 10-18 °C

* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond this without guarantee until the label date.



Available order sizes (AR-P 5320 on request)


  • 1 x 100 ml (test sample)
  • 1 x 250 ml
  • 1 x 1.000 ml
  • 6 x 1.000 ml

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-35

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Resist structures




AR-P 5320: Lift-off resist structure after development.





AR-P 5350: Lift-off resist structure after metal vapour deposition



Process parameters


  • Substrate
    Si 4“ Wafer
  • Tempering
    105 °C, 4 min, hot plate
  • Exposure
    g-line stepper (NA: 0,56)
  • Development
    AR 300-35, 1 : 2, 60 s, 22 °C

Spin curve




Spin curve of the AR-P 5320 and AR-P 5350.


Request for AR-P 5300 series

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]]> Photoresist AR-P 3740 https://www.allresist.com/portfolio-item/photoresist-ar-p-3740/ Thu, 27 Jul 2017 13:50:48 +0000 https://www.allresist.de?post_type=portfolio&p=7596 Sensitive positive-tone standard resists for the production of highly integrated circuits

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AR-P 3740

Sensitive positive-tone standard resists for the production of highly integrated circuits


Characterisation

  • broadband UV, i-line, g-line
  • high sensitivity, highest resolution up to 0.4 μm
  • high contrast, excellent dimensional accuracy
  • optimised coating properties on topologically complex substrate surfaces
  • plasma etching resistant, stable up to 120 °C
  • combination of novolac and naphthoquinone diazide
  • Safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Film thickness / 4000 rpm (μm)
    1,4 µm
  • Resolution (μm)
    0,4 µm
  • Contrast
    6,0
  • Flash point (°C)
    42 °C
  • Storage 6 month (°C)
    10-18 °C


Available order sizes


  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution




Film thickness 1.1 μm Resist structures 0.5 μm L/S



Process parameters


  • Substrate
    Si 4“ Wafer
  • Tempering
    100 °C, 90 s, hot plate
  • Exposure
    i-line stepper (NA: 0,65)
  • Development
    AR 300-47, 60 s, 22 °C

Spin curve





Request for AR-P 3740

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]]> Photoresist AR-P 3500 (T) series https://www.allresist.com/portfolio-item/photoresist-ar-p-3510/ Thu, 27 Jul 2017 13:35:06 +0000 https://www.allresist.de?post_type=portfolio&p=7573 Sensitive positive-tone standard resists for the production of integrated circuits

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AR-P 3500 (T) series

(AR-P 3510, AR-P 3510 T, AR-P 3540, AR-P 3540 T)

Sensitive positive-tone standard resists for the production of integrated circuits


Characterisation

  • broadband UV, i-line, g-line
  • high photosensitivity, high resolution
  • very good adhesion properties
  • 3500 T: robust processing, suitable for TMAH developer 0.26 n
  • plasma etching resistant, temperature-stable up to 120 °C
  • combination of novolac and naphthoquinone diazide
  • Safer Solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Layer thickness/4000 rpm:          2.0 µm
  • Resolution:                                      0.8 µm
  • Contrast:                                          4.0
  • Flash point:                                     46 °C
  • Storage up to 6 months:               10-18 °C

* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond that without guarantee until the label date.



Available order sizes


  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-35

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution




AR-P 3540 T: Film thickness 1.5 μm, Resist structures 0.5 μm



Process parameters


  • Substrate
    Si 4“ Wafer
  • Tempering
    95 °C, 90 s, hot plate
  • Exposure
    g-line stepper (NA: 0,56)
  • Development
    AR 300-44, 60 s, 22 °C

Spin curve




Spin curve of the AR-P 3510/AR-P 3510 T and AR-P 3540/AR-P 3540 T


Request for AR-P 3500 (T) series

The post Photoresist AR-P 3500 (T) series appeared first on Allresist EN.

]]> Photoresist AR-P 3200 series https://www.allresist.com/portfolio-item/photoresist-ar-p-3250/ Thu, 27 Jul 2017 13:30:10 +0000 https://www.allresist.de?post_type=portfolio&p=7561 Thick positive resists for electroplating and microsystems technology

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AR-P 3200 series

(AR-P 3210, AR-P 3220, AR-P 3250(T)

Thick positive resists for electroplating and microsystems technology


Characterisation

  • broadband UV, i-line, g-line
  • high photosensitivity, high resolution
  • profiles with high edge steepness dimens. accuracy
  • plasma etch resistant, electroplating-stable
  •  AR-P 3210/AR-P 3250 for film thicknesses up to 40 μm / 20 μm
  • AR-P 3220 transparent for thick films up to 100μm in multiple coating steps, 100 μm development in one step
  • combination of novolac and naphthoquinone diazide
  • safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Layer thickness/4.000 rpm:  10 µm
  • Resolution:                              4.0 µm
  • Contrast:                                 2.0
  • Flash point:                            46 °C
  • Storage:                                 10-18 °C

* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond this without guarantee until the label date.



Available order sizes for AR-P 3250

(AR-P 3210, AR-P 3220, AR-P 3250 T on request)


  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution




AR-P 3210: Film thickness of 12 μm, resist structures of 4 μm


Spin curve




Spin curves of the AR-P 3210, AR-P 3220, AR-P 3250(T).

Resist structures




AR-P 3220: Layer thickness of 25 µm


Grey tone mask lithography




AR-P 3220: 28 μm-high 3D pyramids


Process parameters


  • Substrate
    Si 4“ Wafer
  • Tempering
    95 °C, 10-15 min, hot plate
  • Exposure
    Maskaligner MJB 3, Kontaktbelichtung
  • Development
    AR 300-26, 1 : 3, 3 min, 22 °C


Request for AR-P 3200 series

The post Photoresist AR-P 3200 series appeared first on Allresist EN.

]]> Photoresist AR-P 3100 series https://www.allresist.com/portfolio-item/photoresist-ar-p-3110/ Thu, 27 Jul 2017 13:05:13 +0000 https://www.allresist.de?post_type=portfolio&p=7550 Adhesion-enhanced positive resists for the production of masks and fine scale divisions

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AR-P 3100 series

(AR-P 3110, AR-P 3120, AR-P 3170)

Adhesion-enhanced positive resists for the production of masks and fine scale divisions


Characterisation

  • broadband UV, i-line, g-line
  • high photosensitivity, high resolution
  • strong adhesion to critical glass/chromium surfaces for extreme stresses during wet-chemical etching processes
  • for the production of CD masters and lattice structures
  • 3170 also suitable for laser interference lithography
  • plasma etching resistant
  • combination of novolac and naphthoquinone diazide
  • Safer Solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Film thickness/4000 rpm:  1000 nm
  • Resolution:                           0.5 µm
  • Contrast:                               3
  • Flash point:                         46 °C
  • Storage 6 month:              10-18 °C

* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond that without guarantee until the label date.



Available order sizes (AR-P 3110 on request)


  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-35

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

Remover AR 300-73

For the stripping of tempered photoresist and e-beam resist films

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution




AR-P 3120: Film thickness 0.6 μm Resist structures 0.38 μm L/S



Process parameters


  • Substrate
    Si 4“ Wafer
  • Tempering
    95 °C, 90 s, hot plate
  • Exposure
    i-line stepper (NA: 0,65)
  • Development
    AR 300-47, 1 : 1, 60 s, 22 °C

Resist structures




AR-P 3170: 70-nm-lines generated by laser interference lithography


Request for AR-P 3100 series

The post Photoresist AR-P 3100 series appeared first on Allresist EN.

]]> Photoresist AR-P 1200 series https://www.allresist.com/portfolio-item/photoresist-ar-p-1210/ Thu, 27 Jul 2017 12:50:34 +0000 https://www.allresist.de?post_type=portfolio&p=7356 Ready-to-use positive spray resists for various applications

The post Photoresist AR-P 1200 series appeared first on Allresist EN.

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AR-P 1200 series

Products on request

(AR-P 1210, AR-P 1220, AR-P 1230)

Ready-to-use positive spray resists for various applications


Characterisation

  • broadband UV, i-line, g-line
  • AR-P 1210: for a uniform coverage of vertical trenches
  • AR-P 1220: for etch profiles with 54° slopes
  • AR-P 1230: for planar wafers
  • good adhesion, smooth surface
  • combination of novolac and naphthoquinone diazide
  • safer solvent PGMEA as well as methyl ethyl ketone

Interesting Resist Wiki articles



Properties


  • Film thickness:                       4-10 µm
  • Resolution:                              1.0 µm
  • Contrast:                                   3.0
  • Flash point:                              -9 °C
  • Storage temperature:             10-18 °C

* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond that without guarantee until the label date.



Available order sizes


  • Products on request

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-44

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Structure resolution




Aluminium conductor paths after etching


Request for AR-P 1200 series

The post Photoresist AR-P 1200 series appeared first on Allresist EN.

]]> Photoresist AR-N 4450-10 T (CAR 44) https://www.allresist.com/portfolio-item/photoresist-ar-n-4450-10-t-car44/ Thu, 27 Jul 2017 12:45:34 +0000 https://www.allresist.de?post_type=portfolio&p=7543 Thick negative resists for electroplating, microsystems technology and LIGA ≤ 20 μm

The post Photoresist AR-N 4450-10 T (CAR 44) appeared first on Allresist EN.

]]>

AR-N 4450-10 T (CAR 44)

Product on request

Thick negative resists for electroplating, microsystems technology and LIGA ≤ 20 μm


Characterisation

  • i-, g-line, e-beam, broadband UV
  • chemically enhanced, very good adhesion, electro plating-stable
  • very high sensitivity, easy removal
  • profiles with high edge steepness for excellent resolution, covering of topologies
  • for film thicknesses up to 20 μm and lift-off
  • novolac, crosslinking agent, amine-based acid generator
  • safer solvent PGMEA

Interesting Resist Wiki articles



Properties


  • Film thickness/1000 rpm (μm)
    10 µm
  • Resolution (μm)
    3.5 µm
  • Contrast
    10.0
  • Flash point (°C)
    44 °C
  • Storage 6 month (°C)
    10-18 °C


Available order sizes


  • Product on request

Please contact us for further requests.

Suitable process chemicals


Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-44

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-46

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-475

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Spin curve




Spin curve of the AR-N 4450-10 T



Lift-off structures




AR-N 4450-10 T: Undercuts produced with low exposure dose

Resist structures




3 μm resolution at a film thickness of 15 μm



Process parameters


  • Resist
    AR-N 4400-10
  • Substrate
    Si 4“ Wafer
  • Tempering
    95 °C, 10 min, hot plate
  • Exposure
    Maskaligner MJB 3, contact exposure
  • Development
    AR 300-47, pur, 3 min, 22 °C


Request for AR-N 4450-10 T

The post Photoresist AR-N 4450-10 T (CAR 44) appeared first on Allresist EN.

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