Adhesions Promoter Archive - Allresist EN https://www.allresist.com/portfolio_entries/process-chemicals-adhesions-promoter/ ALLRESIST GmbH - Strausberg, Germany Mon, 22 Apr 2024 07:23:39 +0000 en-GB hourly 1 https://wordpress.org/?v=6.5.2 HMDS adhesion promoter https://www.allresist.com/portfolio-item/hmds-adhesion-promoter/ Mon, 17 Feb 2020 10:35:24 +0000 https://www.allresist.de?post_type=portfolio&p=10147 For improving the adhesive strength of photo and e-beam resists

The post HMDS adhesion promoter appeared first on Allresist EN.

]]>

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

HMDS will no longer be offered from 01/2024!

Characterisation


• improvement of the adhesive strength of photo and
e-beam resist films

• especially for surfaces with low adhesion properties,
e.g. metal, SiO2, GaAs

• AR 300-80 new: spin coating of a silicium organic
solution = improved adhesion properties and simple,
cheaper alternative to HDMS

• HMDS: evaporation of HMDS on the substrate
surface (equipment required)

Interesting Resist Wiki articles



Properties


  • Density at 20 °C (g/cm3)
    0,774 g/cm³
  • Flash point (°C)
    14 °C
  • Filtration (μm)
    0,2 µm
  • Storage 6 month (°C)
    10-22 °C

Available order sizes


  • 1 x 2.5 L
  • 4 x 2.5 L
  • 8 x 2.5 L

Please contact us for further requests.

Processing information HMDS

Appropriate equipment is required for the processing of HMDS. For large scale production, hot plates with HMDS
vapor deposition are used. If no such equipment is available, the following procedure should be applied:
The pre-treatment should be performed immediately prior to resist coating. Generally, hot plates with integrated
HMDS-evaporation are used in the production. If this option is not available, the substrate is placed in a desiccator
where HMDS evaporates at room temperature or at temperatures up to 160 °C max. HMDS is under these conditions
deposited as monomolecular layer (approx. 5 nm) on the substrate surface.
The treated substrate can be coated with resist immediately after HMDS-deposition without subsequent tempering,
or stored in a closed container for a couple of days.
The storage stability may be limited due to an uptake of water from the atmosphere. Storage in open containers
should thus be avoided.


Request for AR 300-80 and HMDS

The post HMDS adhesion promoter appeared first on Allresist EN.

]]> Adhesion Promoter AR 300-80 new https://www.allresist.com/portfolio-item/adhesion-promoter-ar-300-80-new/ Thu, 27 Jul 2017 15:45:24 +0000 https://www.allresist.de?post_type=portfolio&p=8032 For improving the adhesive strength of photo and e-beam resists

The post Adhesion Promoter AR 300-80 new appeared first on Allresist EN.

]]>

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Characterisation


  • improvement of the adhesive strength of photo and e-beam resist films
  • especially for surfaces with low adhesion properties, e.g. metal, SiO2, GaAs
  • AR 300-80 new: spin coating of a silicium organic solution = improved adhesion properties and simple, cheaper alternative to HDMS

Interesting Resist Wiki articles



Properties


  • Density at 20 °C (g/cm3)
    0,971 g/cm³
  • Flash point (°C)
    46 °C
  • Filtration (μm)
    0,2 µm
  • Storage 6 month (°C)
    10-22 °C

Available order sizes


  • 1 x 1 L

Please contact us for further requests.

Processing information AR 300-80 new

AR 300-80 new is applied by spin coating between 1000 and 6000 rpm. The film thickness can be adjusted by varying the spin speed to the optimum onditions of the respective process. Higher spin speeds and thus thinner films are preferable, e.g. 4000 rpm with approx. 15 nm thickness. Too high
concentrations (film thickness values) may reduce or neutralise the adhesion-promoting effect. It is recommended for AR 300-80 new to perform the subsequent tempering on a hot plate for 2 min or in a convection oven for 25 min at 180 °C. AR 300-80 new offers the big advantage for sensitive substrates that a bake step at olny 60 °C for the same amount of time is sufficient, even though higher temperatures are well tolerated. During tempering, a very uniform, extremely thin layer of adhesion promoter is generated on the substrate (approx.
15 nm). After cooling of the substrate, the resist can be applied as usual. An excess of adhesion promoter may be rinsed off with organic solvents like e.g. AR 600-71. The optimised surface properties are maintained without restriction.

Suitable products

Bottom Resist AR-BR 5460

Positive or negative system for optically transparent and thermally resistant structures

Bottom Resist AR-BR 5480

Positive or negative system for optically transparent and thermally resistant structures

E-Beam Resist AR-N 7500 series

High resolution, process-stable (no CAR) resist for mix & match-processes, temperature stable up to 120 °C

E-Beam Resist AR-N 7520 new series

Highest resolution and highly sensitive resist for mix & match, thermostable up to 140 °C

E-Beam Resist AR-N 7520 series

High resolution resist for mix & match-processes, for high-precision edges, thermo-stable up to 140 °C

E-Beam Resist AR-N 7700 series

High-resolution e-beam resists for the production of integrated circuits

E-Beam Resist AR-N 7720 series

AR-N 7720 e-beam resists with flat gradation High-resolution e-beam resists for the production of diffractive optics

E-Beam Resist AR-P 617 series

Resists for nanometer lithography, highest resolution, Copolymer 33% MA, Solvent: methoxypropanol

E-Beam Resist AR-P 6200 series (CSAR 62)

High-contrast e-beam resists for the production of integrated circuits and masks

E-Beam Resist AR-P 632 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 639 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 641 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 642 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 649 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 6510 series

Thick positive resists for the production of microcomponents

E-Beam Resist AR-P 661 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 662 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 669 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 671 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 672 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 679 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 8100 series (Phoenix 81)

High-contrast, thermolabile resist for integrated circuits and holographic structures

Photoresist AR-N 2200 series

Ready-to-use negative spray resists for various applications

Photoresist AR-N 4340 (CAR)

Highly sensitive negative resist for the production of integrated circuits

Photoresist AR-N 4400 series

Thick and very thick negative resists for electroplating, microsystem technology and LIGA

Photoresist AR-N 4600 series (Atlas 46)

Thick negative resists for electroplating, microsystems technologies and LIGA < 20 μm

Photoresist AR-P 1200 series

Ready-to-use positive spray resists for various applications

Photoresist AR-P 3200 series

Thick positive resists for electroplating and microsystems technology

Photoresist AR-P 3500 (T) series

Sensitive positive-tone standard resists for the production of integrated circuits

Photoresist AR-P 3740

Sensitive positive-tone standard resists for the production of highly integrated circuits

Photoresist AR-P 5300 series

Sensitive resists for the production of vapour deposition patterns by lift-off

Photoresist SX AR-N 4340/7

Negative photoresist for one- and two-layer systems, thermostable up to 300 °C

Photoresist SX AR-P 3500/8

Positive photoresist for high-temperature application up to 300 °C

Protective Coating AR-PC 504

Wafer backside protection during front side etchings for the production of deep structures in silicon

Protective Coating AR-PC 5040

Wafer backside protection during front side etchings for the production of deep structures in silicon

Protective Coating SX AR-PC 5000/41

KOH and HF resistant protective coating for wafer backside protection


Request for AR 300-80 new

The post Adhesion Promoter AR 300-80 new appeared first on Allresist EN.

]]>